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	Semiconductor laser
	SUZUKI KAZUO; KURIHARA HARUKI; TAMURA HIDEO
	1985-09-26
著作权人	TOSHIBA KK
专利号	JP1985189278A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To enable to stably operate in a single longitudinal mode even though the amount of return light is 0.3% or thereabouts in a refractive index waveguide type multiplex heterojunction semiconductor laser by a method wherein both end surfaces of the resonator, which are formed by performing a cleavage, are covered with multilayer interference films, which have a reflectivity of more than a specified %. CONSTITUTION:A stripped resist pattern is formed on an N type GaAs current stopping layer 21 using an ordinary photolithographic process, and after that, a stripe groove 22 of a depth to reach a P type GaAs substrate 20 is formed. A P type Ga0.55Al0.45As clad layer 23, a P type Ga0.87Al0.13As active layer 24, an N type Ga0.55Al0.45As clad layer 25 and an N type GaAl ohmic contact layer 26 are made to grow in order in such a way as to cover the groove 22. Moreover, a P-side electrode 27 is formed on the lower side of the P type GaAs substrate 20 and an N-side electrode 28 is formed on the side of the N type GaAl ohmic contact layer 26. Both end surfaces of the resonator, which are formed by performing a cleavage, are covered with multilayer interference films 291 and 292 formed by a high frequency ion sputtering device. The reflectivity of the light of a wavelength of 780nm in the end surfaces of the resonator becomes 95% by the working of the multilayer interference films 291 and 292.
公开日期	1985-09-26
申请日期	1984-03-08
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83883]
专题	半导体激光器专利数据库
作者单位	TOSHIBA KK
推荐引用方式 GB/T 7714	SUZUKI KAZUO,KURIHARA HARUKI,TAMURA HIDEO. Semiconductor laser. JP1985189278A. 1985-09-26.

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