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	Semiconductor device
	NAJDA, STEPHEN PETER
	2002-11-26
著作权人	SHARP KABUSHIKI KAISHA
专利号	US6486491
国家	美国
文献子类	授权发明
其他题名	Semiconductor device
英文摘要	An (Al,Ga,In)P semiconductor laser device has an optical region disposed between n-type and p-type cladding layers. An active region containing quantum well active layers and barrier layers disposed alternately with the quantum well layers is provided within the optical guiding region. Strained layers of InxGal-xP are used as the barrier layers. The active region is thus aluminium-free, and this reduces the oxygen impurity concentration in the active region thereby improving the performance and reliability of the laser. An aluminium-free spacer layer can be provided between one of the cladding layers and the quantum well active layer disposed closest to that cladding layer. The invention may be applied to other semiconductor devices, for example such as an LED.
公开日期	2002-11-26
申请日期	2000-08-04
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83602]
专题	半导体激光器专利数据库
作者单位	SHARP KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	NAJDA, STEPHEN PETER. Semiconductor device. US6486491. 2002-11-26.

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