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	Liquid-phase epitaxial growth equipment
	KUBO MINORU; SASAI YOICHI; OGURA MOTOTSUGU; ISHINO MASATO
	1987-01-21
著作权人	MATSUSHITA ELECTRIC IND CO LTD
专利号	JP1987013020A
国家	日本
文献子类	发明申请
其他题名	Liquid-phase epitaxial growth equipment
英文摘要	PURPOSE:To remove a damage of a substrate due to a thermal removal by saturating a substrate burying tank under partial pressure of an element which is thermally feasibly separated from the substrate as separated from solution. CONSTITUTION:A substrate 2 is mounted on the recess 3a of a substrate mounting carbon slide member 3, and a solution holder 7 having a growing solution 6 and a substrate burying through hole 6 (in a holder 4) is mounted thereon. A solution tank 8 is disposed on the holder 4, a solution 9 which contains In or Sn as a solvent and InP as a solute is provided in the tank, and a cover 10 is placed. The InP substrate is exposed with H2 atmosphere during the growing period, but since the P is evaporated at high temperature from the solution 9 of the tank 8 and sealed, the holder 4 is filled with the partial pressure of the P. Thus, the separation of the P from the substrate 2 is enabled to be compensated in a saturated state to remove a thermal damage.
公开日期	1987-01-21
申请日期	1985-07-11
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83573]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	KUBO MINORU,SASAI YOICHI,OGURA MOTOTSUGU,et al. Liquid-phase epitaxial growth equipment. JP1987013020A. 1987-01-21.

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