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	Semiconductor laser-array device
	TANETANI MOTOTAKA; MATSUI KANEKI; YAMAMOTO SABUROU; YANO MORICHIKA
	1985-10-26
著作权人	SHARP KK
专利号	JP1985214580A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser-array device
英文摘要	PURPOSE:To provide with an improved yield a laser-array device capable of generating a phase-synchronized high-energy beam by a method wherein passive waveguides are provided between active waveguides and the end faces of the active waveguides are different from the end faces of the passive waveguides in reflectivity. CONSTITUTION:Resistive electrodes 8, 9 are built on the substrate and on the grown layers, respectively, and the end faces are exposed by cleavage. The end faces are coated with non-reflection films 102 and the end faces of active waveguides 10 are further provided by evaporation with metal films 101 of Cr, Au, or the like, for a 100% reflectivity. As for the difference between the elements in terms of the transverse refraction index, it will be larger in an active waveguide 10 than the reduction (DELTAnfcapprox.= 10) of the refractive index due to carrier injection. In a passive waveguide 11, there will be a difference in refractive indices (DELTAnapprox.=5X10) that is great enough to guide optical beams of the TE mode. With the device designed as such, there will be a 90 deg. deviation in phase between the photoelectric fields respectively of the passive waveguides 11 and active waveguides 10. With the reflectivity at the end faces 101, 102 being respectively 100%, 0%, there will be another 90 deg. phase deviation in the electric field under the environmental conditions surrounding the end faces 101, 102.
公开日期	1985-10-26
申请日期	1984-04-10
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83559]
专题	半导体激光器专利数据库
作者单位	SHARP KK
推荐引用方式 GB/T 7714	TANETANI MOTOTAKA,MATSUI KANEKI,YAMAMOTO SABUROU,et al. Semiconductor laser-array device. JP1985214580A. 1985-10-26.

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