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	Manufacture of semiconductor laser
	TAKAMURA TAKASHI
	1988-02-17
著作权人	SEIKO EPSON CORP
专利号	JP1988036588A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor laser
英文摘要	PURPOSE:To manufacture a phase synchronized type laser, whose threshold current value is small, in less manufacturing processes, by yielding specified distribution in optical irradiation intensity in a chemical vapor growth method of photodecomposable organometallics, thereby forming an active layer having a stripe structure. CONSTITUTION:An active layer 305 of a phase synchronized type laser, which has a stripe structure, is formed by yielding a specified distribution in optical irradiation intensity in a chemical vapor growth method using photodecomposable organometallics. Excimer laser 101 is used to selectively irradiate an Al0.5Ga0.5As clad layer 105 through a photomask 102 by using the chemical vapor growth method of the organometallics. An active layer 104 comprising Al0.2Ga0.8As and a current narrowing layer 103 comprising Al0.3Ga0.7As are simultaneously grown. Thus, a buffer layer 303 of N-GaAs, an N-Al0.5Ga0.5As clad layer 304, an Al0.2Ga0.8As active layer 305, an Al0.3Ga0.7 As current narrowing layer 306, a P-Al0.5Ga0.5As clad layer 307 and a P-GaAs contact layer 308 are grown on an N-GaAs substrate 302. Electrodes 301 and 309 are vapor-deposited on upper and lower parts of the structure, which is formed in this way.
公开日期	1988-02-17
申请日期	1986-07-30
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83482]
专题	半导体激光器专利数据库
作者单位	SEIKO EPSON CORP
推荐引用方式 GB/T 7714	TAKAMURA TAKASHI. Manufacture of semiconductor laser. JP1988036588A. 1988-02-17.

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