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	Manufacture of semiconductor device
	ONOUCHI TOSHIHIKO; NOJIRI HIDEAKI
	1992-01-14
著作权人	CANON INC
专利号	JP1992010485A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor device
英文摘要	PURPOSE:To contrive a complete separation of a light from a current by a method wherein AlGaAS/GaAs-series semiconductors are laminated and an optical waveguide is formed by etching, after which a periphery of said waveguide is formed into a mesa form and is subjected to a burying re-growth by a liquid-phase growth. CONSTITUTION:Firstly on an N-type GaAs substrate 1, an N-type GaAs buffer layer 2, an N-type Al0.1Ga0.9As layer 3, an N-type Al0.45Ga0.55As clad layer 4, an undoped Al0.1Ga0.9As active layer 5, P-type Al0.45Ga0.55As clad layer 6 and a P-type GaAs cap layer 7 are laminated by MBE(Molecular Beam Epitaxy). Then, a photoresist 30 is patterned by photolithography and the etching down to the Al0.1Ga0.9As layer 3 is effected by RIBE(Reactive Ion Beam Etching) in order to form a waveguide structure. Next, after removing the photoresist 30, a liquid-phase growth is performed to grow an Al0.5Ga0.5As 9 of high resistance for 1min. and 10sec. at 800 deg.C.
公开日期	1992-01-14
申请日期	1990-04-26
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83449]
专题	半导体激光器专利数据库
作者单位	CANON INC
推荐引用方式 GB/T 7714	ONOUCHI TOSHIHIKO,NOJIRI HIDEAKI. Manufacture of semiconductor device. JP1992010485A. 1992-01-14.

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