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	Manufacture of semiconductor laser
	IMAMOTO HIROSHI
	1988-09-13
著作权人	OMRON TATEISI ELECTRONICS CO
专利号	JP1988220587A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor laser
英文摘要	PURPOSE:To obtain a semiconductor laser without dividing a crystalgrowth process into two, by a method wherein the (n 11) A plane is exposed, Si-doped AlSGaAs on GaAs is grown on it, a double heterojunction whose n-type clad layer is composed of Si-doped AlSGaAs is installed and, futhermore, an n-type cap layer is installed. CONSTITUTION:The (n 11) (where n =1-3) A plane is exposed by making a stripe-shaped groove or a slope on a p-type GaAs substrate 7 of the orientation of plane (100) or on a GaAs substrate whose surface layer is composed of a p-type GaAs layer; Si-doped GaAs or AlGaAs 6 is grown on the assembly by using a molecular beam epitaxial growth method; a double heterojunction structure whose n-type clad layer is composed of an Si-doped AlGaAs layer 3 and whose cap layer is composed of Sn-doped GaAs is installed on the assembly. By this setup, only the 1A plane becomes a p-type and the remaining flat part becomes an n-type; an internal electric-current constriction part is constituted at the groove or at the stepped central part; it is possible to manufacture a semiconductor laser of the internal electric-current constriction type with a single crystal-growth process.
公开日期	1988-09-13
申请日期	1987-03-10
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83400]
专题	半导体激光器专利数据库
作者单位	OMRON TATEISI ELECTRONICS CO
推荐引用方式 GB/T 7714	IMAMOTO HIROSHI. Manufacture of semiconductor laser. JP1988220587A. 1988-09-13.

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