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	Manufacture of semiconductor device
	MAEDA MASAHIRO
	1989-11-02
著作权人	SUMITOMO ELECTRIC IND LTD
专利号	JP1989274489A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor device
英文摘要	PURPOSE:To prevent the diffusion of carriers such as zinc, silicon, etc., as a dopant from a substrate by a crystal interface, and to maintain a current constriction layer at high resistance by forming the crystal interface in a buried layer for current constriction when the buried layer is shaped through vapor-phase epitaxial growth. CONSTITUTION:A protruding section 2 for a current constriction layer is formed to one part of a substrate 1, the active layer 3 of a semiconductor device as a laser emission section is shaped onto the top face of the protruding section 2, and a clad layer 4 and a nitride film 5 are further laminated successively. These sections are formed to an hourglass shape that they are narrowed near the active layer 3. The side faces of the clad layer 4 and the protruding section 2 are most narrowed in the lower section of the active layer 3 and etched to a tapered shape by etching the semiconductor laser, and crystal faces 3A, B, C are precipitated. A crystal is grown so as to cover the side faces of each layer 2, 3, 4, thus preparing a buried layer 6. When the buried layer 6 is prepared, strong crystal interfaces are generated on the surfaces of D and E in the buried layer 6 through stain-etching. Accordingly, the regions H, J and I, K of the buried layer 6 inhibit carrier diffusion from the substrate 1, and are kept in high resistance layers.
公开日期	1989-11-02
申请日期	1988-04-26
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83363]
专题	半导体激光器专利数据库
作者单位	SUMITOMO ELECTRIC IND LTD
推荐引用方式 GB/T 7714	MAEDA MASAHIRO. Manufacture of semiconductor device. JP1989274489A. 1989-11-02.

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