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	Liquid phase epitaxial growth method
	ISHINO MASATO; SASAI YOICHI; KUBO MINORU
	1988-05-30
著作权人	MATSUSHITA ELECTRIC IND CO LTD
专利号	JP1988126218A
国家	日本
文献子类	发明申请
其他题名	Liquid phase epitaxial growth method
英文摘要	PURPOSE:To reduce the deformation of a diffraction grating generated by a melt back by a method wherein an LPE growing method is performed using the growing boat on which the region contacting to the grown melt necessary for formation of an epitaxial layer is formed using a non-porous material. CONSTITUTION:The epitaxial substrate 15, having a diffraction grating formed on the surface, is inserted into the recessed part of a slider 9. A grown melt 11 is inserted into the growth vessel 12 in a melt holder 10, and a weight 13 is mounted. SiC film 14 is coated as a non-porous material on the side wall of the growth vessel 12, the slider 9 and the bottom face of the weight 13. The SiC film 14 prevents the absorption of the grown melt 11 into porous graphite, the film 14 suppresses the formation of three-dimensional nucleus through the intermediary of the absorbed solute, and also it performs the function of lowering the degree of supersaturation of the melt 1 As a result, the deformation of the diffraction grating caused by a melt-back can be reduced.
公开日期	1988-05-30
申请日期	1986-11-14
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83322]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	ISHINO MASATO,SASAI YOICHI,KUBO MINORU. Liquid phase epitaxial growth method. JP1988126218A. 1988-05-30.

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