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	半導体レーザ素子
	山下 茂雄; 河野 敏弘; 梶村 俊
	1997-08-15
著作权人	株式会社日立製作所
专利号	JP2685499B2
国家	日本
文献子类	授权发明
其他题名	半導体レーザ素子
英文摘要	PURPOSE:To enable the reduction of a leakage current in a lateral direction by a method wherein a region of a clad layer other than a current injection region is formed of a multilayer structure and a reverse bias is applied onto the region while an element is in operation. CONSTITUTION:Concerning a clad layer 7 formed on a side opposite to a substrate 1 on the basis of an active layer 3, the region of the clad layer 7 other than a central current injection section is formed of a multilayer structure and a reverse bias applied inside the clad layer 7 while an element is in operation. That is, a part of the clad layer 7 is formed of a material whose conductivity type is opposite to that of a clad layer 4 in contact with the part so as to serve as a current constriction layer. Therefore, a reversely biased barrier is formed in the clad layer 7 other than the current injection section when the semiconductor laser is normally biased. By these processes, a current leakage in a lateral direction can be reduced, so that a semiconductor laser element with a low threshold current can be realized.
公开日期	1997-12-03
申请日期	1988-06-01
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83305]
专题	半导体激光器专利数据库
作者单位	株式会社日立製作所
推荐引用方式 GB/T 7714	山下 茂雄,河野 敏弘,梶村 俊. 半導体レーザ素子. JP2685499B2. 1997-08-15.

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