| Semiconductor laser | |
| MIHIAERU SHIRINKU | |
| 1992-08-19 | |
| 著作权人 | ALCATEL NV |
| 专利号 | JP1992229679A |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE: To provide a semiconductor laser in which an inclination angle, the rate of a top end and a bottom part, and the depth of a grid are adjusted for the optimal connection for reducing feedback sensitivity at a high quantization efficiency, and the method of manufacturing it. CONSTITUTION: A waveguide layer 3 formed on a grid is formed directly on a grid 2 by an LPE, so that the characteristics of the grid 2 can be precisely formed. A laser includes plural number of layers arrayed at the upper part of the waveguide layer formed on the grid, and those layers contain a gaseous phase or molecular beam epitaxy such as an MOVPE, MOMBE, GAMBE, or CBE, so that an adverse effects on the lower grid are not given. A buffer layer 4 is provided between the waveguide layer 3 and the active layer 5, and a clad layer 6 and a contact layer 7 are formed overlapped on it. |
| 公开日期 | 1992-08-19 |
| 申请日期 | 1991-05-02 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83254]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ALCATEL NV |
| 推荐引用方式 GB/T 7714 | MIHIAERU SHIRINKU. Semiconductor laser. JP1992229679A. 1992-08-19. |
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