QQ客服 官方微博 反馈留言

	Defect-induced magnetism in SiC probed by nuclear magnetic resonance
	Z. T. Zhang1,2; D. Dmytriieva2,3; S. Molatta2,3; J. Wosnitza2,3; Yutian Wang1,4; M. Helm1,3; Shengqiang Zhou1; H. K¨uhne2
刊名	PHYSICAL REVIEW B
	2017-02-08
语种	英语
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/92752]
专题	合肥物质科学研究院_中科院强磁场科学中心
通讯作者	Z. T. Zhang; H. K¨uhne
作者单位	1.Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, D-01314 Dresden, Germany 2.Hochfeld-Magnetlabor Dresden (HLD-EMFL), Helmholtz-Zentrum Dresden-Rossendorf, D-01314 Dresden, Germany 3.TU Dresden, D-01062 Dresden, Germany 4.School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi’ an 710071, China
推荐引用方式 GB/T 7714	Z. T. Zhang,D. Dmytriieva,S. Molatta,et al. Defect-induced magnetism in SiC probed by nuclear magnetic resonance[J]. PHYSICAL REVIEW B,2017.
APA	Z. T. Zhang.,D. Dmytriieva.,S. Molatta.,J. Wosnitza.,Yutian Wang.,...&H. K¨uhne.(2017).Defect-induced magnetism in SiC probed by nuclear magnetic resonance.PHYSICAL REVIEW B.
MLA	Z. T. Zhang,et al."Defect-induced magnetism in SiC probed by nuclear magnetic resonance".PHYSICAL REVIEW B (2017).

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。