Chemical Solution Route for High-Quality Multiferroic BiFeO3 Thin Films | |
Yang, Bingbing2,3; Jin, Linghua2,3; Wei, Renhuai3; Tang, Xianwu3; Hu, Ling3; Tong, Peng3; Yang, Jie3; Song, Wenhai3; Dai, Jianming3; Zhu, Xuebin3 | |
刊名 | SMALL |
2019-11-15 | |
关键词 | BiFeO3 chemical solution deposition dielectrics epitaxial thin films ferroelectrics |
ISSN号 | 1613-6810 |
DOI | 10.1002/smll.201903663 |
英文摘要 | Bismuth ferrite (BiFeO3) has recently become interesting as a room-temperature multiferroic material, and a variety of prototype devices have been designed based on its thin films. A low-cost and simple processing technique for large-area and high-quality BiFeO3 thin films that is compatible with current semiconductor technologies is therefore urgently needed. Development of BiFeO3 thin films is summarized with a specific focus on the chemical solution route. By a systematic analysis of the recent progress in chemical-route-derived BiFeO3 thin films, the challenges of these films are highlighted. An all-solution chemical-solution deposition (AS-CSD) for BiFeO3 thin films with different orientation epitaxial on various oxide bottom electrodes is introduced and a comprehensive study of the growth, structure, and ferroelectric properties of these films is provided. A facile low-cost route to prepare large-area high-quality epitaxial BFO thin films with a comprehensive understanding of the film thickness, stoichiometry, crystal orientation, ferroelectric properties, and bottom electrode effects on evolutions of microstructures is provided. This work paves the way for the fabrication of devices based on BiFeO3 thin films. |
资助项目 | National Key Basic Research[2014CB931704] ; National Natural Science Foundation of China[U1432137] ; Chinese Academy of Sciences Large-Scale Scientific Facility[U1432137] ; Research Foundation of Education Bureau of Hunan Province, China[18C0440] |
WOS关键词 | FERROELECTRIC PROPERTIES ; ELECTRICAL-PROPERTIES ; ENHANCED POLARIZATION ; DOMAIN-STRUCTURE ; GRAIN-GROWTH ; X-RAY ; THICKNESS ; BEHAVIOR ; LEAKAGE ; TRANSITION |
WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
语种 | 英语 |
出版者 | WILEY-V C H VERLAG GMBH |
WOS记录号 | WOS:000496530700001 |
资助机构 | National Key Basic Research ; National Natural Science Foundation of China ; Chinese Academy of Sciences Large-Scale Scientific Facility ; Research Foundation of Education Bureau of Hunan Province, China |
内容类型 | 期刊论文 |
源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/73833] |
专题 | 合肥物质科学研究院_中科院固体物理研究所 |
通讯作者 | Zhu, Xuebin; Cheng, Zhenxiang |
作者单位 | 1.Univ Wollongong, Australia Inst Innovat Mat, Inst Superconducting & Elect Mat, Innovat Campus,Squires Way, North Wollongong, NSW 2500, Australia 2.Univ Sci & Technol China, Grad Sch, Sci Isl Branch, Hefei 230026, Anhui, Peoples R China 3.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China |
推荐引用方式 GB/T 7714 | Yang, Bingbing,Jin, Linghua,Wei, Renhuai,et al. Chemical Solution Route for High-Quality Multiferroic BiFeO3 Thin Films[J]. SMALL,2019. |
APA | Yang, Bingbing.,Jin, Linghua.,Wei, Renhuai.,Tang, Xianwu.,Hu, Ling.,...&Cheng, Zhenxiang.(2019).Chemical Solution Route for High-Quality Multiferroic BiFeO3 Thin Films.SMALL. |
MLA | Yang, Bingbing,et al."Chemical Solution Route for High-Quality Multiferroic BiFeO3 Thin Films".SMALL (2019). |
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