All-Optical-Input Transistors: Light-Controlled Enhancement of Plasmon-Induced Photocurrent

doi:10.1002/adfm.201802288

CORC > 合肥物质科学研究院 > 中国科学院合肥物质科学研究院 > 中科院固体物理研究所

	All-Optical-Input Transistors: Light-Controlled Enhancement of Plasmon-Induced Photocurrent
	Gao, Xu Dong 2,4; Fei, Guang Tao 2,4; Zhang, Yao 1,3,5; Zhang, Li De 2,4; Hu, Ze Min 2,4
刊名	ADVANCED FUNCTIONAL MATERIALS
	2018-10-04
卷号	28 期号:40 页码:8
关键词	Ag/TiO2 oxygen adsorption photocurrents plasmon-induced currents transistors
ISSN号	1616-301X
DOI	10.1002/adfm.201802288
英文摘要	Although phototransistors for controlling photocurrent with electricity have been studied intensively for several decades, transistors with all-optical inputs that can control the photocurrent with light have not been investigated thus far. In this paper, a plasmonic porous Ag/TiO2 transistor is fabricated with all-optical inputs. One light input acts as the source to generate a plasmonic-hot-electron photocurrent, while the other gate light changes the current channel by adjusting the height of an Ag/TiO2 Schottky barrier. As a result, the plasmon-induced photocurrent generated by the source light can be enhanced by several to one hundred times by controlling the gate light. In addition to signal enhancement, the device can also be used for signal modulation and switching.
资助项目	CAS/SAFEA International Partnership Program for Creative Research Teams ; National Basic Research Program of China (973 Program)[2012CB932303] ; National Natural Science Foundation of China[51701207] ; National Natural Science Foundation of China[51471162] ; National Natural Science Foundation of China[51502294] ; National Natural Science Foundation of China[51671183] ; Foundation of Director of Institute of Solid State Physics, Chinese Academy of Sciences[2016DFY20]
WOS关键词	PHOTODETECTORS ; PHOTORESPONSE ; NANOPARTICLES ; NANORODS
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种	英语
出版者	WILEY-V C H VERLAG GMBH
WOS记录号	WOS:000446155700008
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/39280]
专题	合肥物质科学研究院_中科院固体物理研究所
通讯作者	Fei, Guang Tao; Zhang, Yao
作者单位	1.DIPC, ES-20018 Donostia San Sebastian, Spain 2.Chinese Acad Sci, Hefei Inst Phys Sci, Inst Solid State Phys, Key Lab Mat Phys, POB 1129, Hefei 230031, Anhui, Peoples R China 3.Univ Basque Country, CSIC, Mat Phys Ctr, ES-20018 Donostia San Sebastian, Spain 4.Chinese Acad Sci, Hefei Inst Phys Sci, Inst Solid State Phys, Anhui Key Lab Nanomat & Nanotechnol, POB 1129, Hefei 230031, Anhui, Peoples R China 5.Univ Sci & Technol China, Microscale & Synerget Innovat Ctr Quantum Informa, Hefei Natl Lab Phys Sci, Hefei 230026, Anhui, Peoples R China
推荐引用方式 GB/T 7714	Gao, Xu Dong,Fei, Guang Tao,Zhang, Yao,et al. All-Optical-Input Transistors: Light-Controlled Enhancement of Plasmon-Induced Photocurrent[J]. ADVANCED FUNCTIONAL MATERIALS,2018,28(40):8.
APA	Gao, Xu Dong,Fei, Guang Tao,Zhang, Yao,Zhang, Li De,&Hu, Ze Min.(2018).All-Optical-Input Transistors: Light-Controlled Enhancement of Plasmon-Induced Photocurrent.ADVANCED FUNCTIONAL MATERIALS,28(40),8.
MLA	Gao, Xu Dong,et al."All-Optical-Input Transistors: Light-Controlled Enhancement of Plasmon-Induced Photocurrent".ADVANCED FUNCTIONAL MATERIALS 28.40(2018):8.