Growth and characterization of an Al-doped GaSe crystal

doi:10.1016/j.jcrysgro.2017.09.006

CORC > 合肥物质科学研究院 > 中国科学院合肥物质科学研究院 > 中科院安徽光学精密机械研究所

	Growth and characterization of an Al-doped GaSe crystal
	Huang, C. B.; Mao, M. S.; Wu, H. X.; Wang, Z. Y.; Ni, Y. B.
刊名	JOURNAL OF CRYSTAL GROWTH
	2018-02-01
卷号	483 页码:318-322
关键词	Characterization Doping Bridgman technique Single crystal growth Nonlinear optic materials
ISSN号	0022-0248
DOI	10.1016/j.jcrysgro.2017.09.006
通讯作者	Wu, H. X.(hxwu@aiofm.ac.cn)
英文摘要	A GaSe: Al (0.13 wt%) single crystal was grown using the Bridgman method combined with a crucible rotation technique. A 35 x 19 x 5.5 mm(3) sample was cut from the as-grown crystal ingot. The GaSe: Al (0.13 wt%) crystal has an indentation hardness of 2.27 GPa, which is 2.6 times harder than the pure GaSe crystal. In particular, a sample with a thickness of 5.5 mm has an infrared transmission of approximately 60%. The absorption coefficient of this sample is as low as 0.1 cm(-1) over the range of 0.83 to -14 mu m, which demonstrates its high optical quality. A crystal growth method with the described procedures may be suitable to grow other doped GaSe crystals. (C) 2017 Published by Elsevier B.V.
WOS关键词	DIFFERENCE-FREQUENCY-GENERATION ; OPTICAL-PROPERTIES ; GALLIUM SELENIDE ; SEMICONDUCTOR ; GASE1-XSX ; RADIATION ; RANGE ; SHG
WOS研究方向	Crystallography ; Materials Science ; Physics
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000419025800049
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/35065]
专题	合肥物质科学研究院_中科院安徽光学精密机械研究所
通讯作者	Wu, H. X.
作者单位	Chinese Acad Sci, Anhui Inst Opt & Fine Mech, Anhui Prov Key Lab Photon Devices & Mat, Hefei 230031, Anhui, Peoples R China
推荐引用方式 GB/T 7714	Huang, C. B.,Mao, M. S.,Wu, H. X.,et al. Growth and characterization of an Al-doped GaSe crystal[J]. JOURNAL OF CRYSTAL GROWTH,2018,483:318-322.
APA	Huang, C. B.,Mao, M. S.,Wu, H. X.,Wang, Z. Y.,&Ni, Y. B..(2018).Growth and characterization of an Al-doped GaSe crystal.JOURNAL OF CRYSTAL GROWTH,483,318-322.
MLA	Huang, C. B.,et al."Growth and characterization of an Al-doped GaSe crystal".JOURNAL OF CRYSTAL GROWTH 483(2018):318-322.