Effect of irradiation of silicon photodiode arrays for ITER radial x-ray camera investigated by measuring response and current-voltage characteristics

doi:10.1063/5.0031386

	Effect of irradiation of silicon photodiode arrays for ITER radial x-ray camera investigated by measuring response and current-voltage characteristics
	Li, Chaozhi 1,2; Zhao, Jinlong 2; Cao, Hongrui 2; Hu, Liqun 2; Chen, Kaiyun 2; Zhang, Zijun 2
刊名	REVIEW OF SCIENTIFIC INSTRUMENTS
	2021-04-01
卷号	92
ISSN号	0034-6748
DOI	10.1063/5.0031386
通讯作者	Cao, Hongrui(caohr@ipp.ac.cn)
英文摘要	The response and current-voltage (I-V) characteristics of irradiated and non-irradiated silicon photodiode arrays (SPDAs) for use in the International Thermonuclear Experimental Reactor camera are measured and compared. Irradiation experiments are carried out using a uranium-zirconium hydride pulsed reactor. The total equivalent 1 MeV neutron fluence with energy above 0.01 MeV is similar to 9.89 x 10(13) n cm(-2). The output signal of the irradiated SPDA (XD2) shows a nonlinear trend during the irradiation experiment. The final signal is about 5.6% of the original one in the visible light region. Tests on the Experimental Advanced Superconducting Tokamak (EAST) show that the XD2 signal is 70%-80% of that of a non-irradiated SPDA (XD3). This indicates that irradiated SPDAs can still observe plasma radiation after exposure to 9.89 x 10(13) n cm(-2) neutron fluence. However, because the neutron fluence of external camera detectors will reach 1.4 x 10(16) n cm(-2) in D-T phase, the SPDAs might become unusable at some point. The responsivity ratio of irradiated and non-irradiated SPDAs is about 4%-20% from 7 to 13 keV. The degradation of responsivity is related to the energy level. After irradiation, the reversed dark current rises from 0.1 to 10 nA to a level of around 1 mu A. In terms of tests of XD2 on EAST, zero bias is a good working condition for irradiated SPDAs.
资助项目	National Key R&D Program of China[2017YFE0300503]
WOS研究方向	Instruments & Instrumentation ; Physics
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000637636900001
资助机构	National Key R&D Program of China
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/121741]
专题	中国科学院合肥物质科学研究院
通讯作者	Cao, Hongrui
作者单位	1.Univ Sci & Technol China, Hefei 230026, Peoples R China 2.Chinese Acad Sci, Hefei Inst Phys Sci, Inst Plasma Phys, Hefei 230031, Peoples R China
推荐引用方式 GB/T 7714	Li, Chaozhi,Zhao, Jinlong,Cao, Hongrui,et al. Effect of irradiation of silicon photodiode arrays for ITER radial x-ray camera investigated by measuring response and current-voltage characteristics[J]. REVIEW OF SCIENTIFIC INSTRUMENTS,2021,92.
APA	Li, Chaozhi,Zhao, Jinlong,Cao, Hongrui,Hu, Liqun,Chen, Kaiyun,&Zhang, Zijun.(2021).Effect of irradiation of silicon photodiode arrays for ITER radial x-ray camera investigated by measuring response and current-voltage characteristics.REVIEW OF SCIENTIFIC INSTRUMENTS,92.
MLA	Li, Chaozhi,et al."Effect of irradiation of silicon photodiode arrays for ITER radial x-ray camera investigated by measuring response and current-voltage characteristics".REVIEW OF SCIENTIFIC INSTRUMENTS 92(2021).