Spin polarization in monolayer MoS2 in the presence of proximity-induced interactions
Zhao, X. N.3,4; Xu, W.1,3,5; Xiao, Y. M.1,5; Van Duppen, B.2
刊名INTERNATIONAL JOURNAL OF MODERN PHYSICS C
2020-10-01
卷号31
关键词Monolayer MoS2 Rashba spin-orbit coupling exchange interaction spin polarization
ISSN号0129-1831
DOI10.1142/S0129183120501430
通讯作者Zhao, X. N.(xnzhao@theory.issp.ac.cn)
英文摘要When monolayer (ML) MoS2 is placed on a substrate, the proximity-induced interactions such as the Rashba spin-orbit coupling (RSOC) and exchange interaction (EI) can be introduced. Thus, the electronic system can behave like a spintronic device. In this study, we present a theoretical study on how the presence of the RSCO and EI can lead to the band splitting, the lifting of the valley degeneracy and to the spin polarization in n- and p-type ML MoS2. We find that the maxima of the in-plane spin orientation in the conduction and valence bands in ML MoS2 depend on the Rashba parameter and the effective Zeeman field factor. At a fixed Rashba parameter, the minima of the split conduction band and the maxima of the split valence band along with the spin polarization in ML MoS2 can be tuned effectively by varying the effective Zeeman field factor. On the basis that the EI can be induced by placing the ML MoS2 on a ferromagnetic substrate or by magnetic doping in ML MoS2, we predict that the interesting spintronic effects can be observed in n- and p-type ML MoS2. This work can be helpful to gain an in-depth understanding of the basic physical properties of ML MoS2 for application in advanced electronic and optoelectronic devices.
资助项目Ministry of Science and Technology of China[2011YQ130018] ; Department of Science and Technology of Yunnan Province ; Chinese Academy of Sciences
WOS关键词VALLEY POLARIZATION
WOS研究方向Computer Science ; Physics
语种英语
出版者WORLD SCIENTIFIC PUBL CO PTE LTD
WOS记录号WOS:000583803200009
资助机构Ministry of Science and Technology of China ; Department of Science and Technology of Yunnan Province ; Chinese Academy of Sciences
内容类型期刊论文
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/105170]  
专题中国科学院合肥物质科学研究院
通讯作者Zhao, X. N.
作者单位1.Yunnan Univ, Yunnan Key Lab Quantum Informat, Kunming 650091, Yunnan, Peoples R China
2.Univ Antwerp, Dept Phys, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
3.Chinese Acad Sci, HFIPS, Key Lab Mat Phys, Inst Solid State Phys, Hefei 230031, Peoples R China
4.Chinese Univ Sci & Technol, Hefei 230026, Peoples R China
5.Yunnan Univ, Sch Phys & Astron, Kunming 650091, Yunnan, Peoples R China
推荐引用方式
GB/T 7714
Zhao, X. N.,Xu, W.,Xiao, Y. M.,et al. Spin polarization in monolayer MoS2 in the presence of proximity-induced interactions[J]. INTERNATIONAL JOURNAL OF MODERN PHYSICS C,2020,31.
APA Zhao, X. N.,Xu, W.,Xiao, Y. M.,&Van Duppen, B..(2020).Spin polarization in monolayer MoS2 in the presence of proximity-induced interactions.INTERNATIONAL JOURNAL OF MODERN PHYSICS C,31.
MLA Zhao, X. N.,et al."Spin polarization in monolayer MoS2 in the presence of proximity-induced interactions".INTERNATIONAL JOURNAL OF MODERN PHYSICS C 31(2020).
个性服务
查看访问统计
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。


©版权所有 ©2017 CSpace - Powered by CSpace