Magnetic Phase Transition in strained two-dimensional semiconductor MoTeI Monolayer

doi:10.1016/j.apsusc.2020.147842

	Magnetic Phase Transition in strained two-dimensional semiconductor MoTeI Monolayer
	Li, Wanxue 1,2; Guo, Chunsheng 2; Zang, Qing 3; Ding, Rui 3; Zhao, Yong 1
刊名	APPLIED SURFACE SCIENCE
	2021-01-15
卷号	536
关键词	MoTeI monolayer Ferrimagnetic semiconductor Tunable magnetic phase
ISSN号	0169-4332
DOI	10.1016/j.apsusc.2020.147842
通讯作者	Guo, Chunsheng(csguo@swjtu.edu.cn) ; Zhao, Yong(yzhao@home.swjtu.edu.cn)
英文摘要	We find through density functional theory that the two-dimensional MoTeI monolayer is intrinsically a ferromagnetic semiconductor. The magnetic states of MoTeI monolayer are sensitive and can be significantly changed by biaxial strain. It is fully spin polarized and half-metallic intrinsically or with tensile strain, while becomes antiferromagnetic when over 0.4% compressive strain is applied. After the magnetic phase transition, the semiconducting characteristics are always maintained and little charge transfer is observed. We believe that the magnetic phase transition is attributed to the competition of the direct interaction and indirect superexchange interaction between magnetic centers of Mo atoms. These findings suggest that the MoTeI monolayer can be a potential candidate for spintronics applications.
资助项目	National Key R&D Programs of China[2017YFE0301105] ; National Key Research and Development Plan[2017YFE0301306]
WOS关键词	INITIO MOLECULAR-DYNAMICS ; AB-INITIO ; GRAPHENE NANORIBBON ; PLUS U ; FERROMAGNETISM ; BEHAVIOR ; LAYER ; BORON
WOS研究方向	Chemistry ; Materials Science ; Physics
语种	英语
出版者	ELSEVIER
WOS记录号	WOS:000580627000079
资助机构	National Key R&D Programs of China ; National Key Research and Development Plan
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/105163]
专题	中国科学院合肥物质科学研究院
通讯作者	Guo, Chunsheng; Zhao, Yong
作者单位	1.Southwest Jiaotong Univ, Superconduct & New Energy R&D Ctr, Key Lab Magnet Levitat Technol & Maglev Trains, Minist Educ, Mail Stop 165, Chengdu 610031, Sichuan, Peoples R China 2.Southwest Jiaotong Univ, Superconduct & New Energy R&D Ctr, Sch Phys Sci & Technol, Chengdu 610031, Sichuan, Peoples R China 3.Chinese Acad Sci, Inst Plasma Phys, Hefei 230031, Peoples R China
推荐引用方式 GB/T 7714	Li, Wanxue,Guo, Chunsheng,Zang, Qing,et al. Magnetic Phase Transition in strained two-dimensional semiconductor MoTeI Monolayer[J]. APPLIED SURFACE SCIENCE,2021,536.
APA	Li, Wanxue,Guo, Chunsheng,Zang, Qing,Ding, Rui,&Zhao, Yong.(2021).Magnetic Phase Transition in strained two-dimensional semiconductor MoTeI Monolayer.APPLIED SURFACE SCIENCE,536.
MLA	Li, Wanxue,et al."Magnetic Phase Transition in strained two-dimensional semiconductor MoTeI Monolayer".APPLIED SURFACE SCIENCE 536(2021).