Magnetotransport signatures of Weyl physics and discrete scale invariance in the elemental semiconductor tellurium

doi:10.1073/pnas.2002913117

	Magnetotransport signatures of Weyl physics and discrete scale invariance in the elemental semiconductor tellurium
	Zhang, Nan 1,2,3; Zhao, Gan 1,2; Li, Lin 1,2,3; Wang, Pengdong 4; Xie, Lin 5; Cheng, Bin 1,2,3; Li, Hui 6,7; Lin, Zhiyong 1,2,3; Xi, Chuanying 8; Ke, Jiezun 9
刊名	PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
	2020-05-26
卷号	117
关键词	Weyl semiconductor tellurium negative longitudinal magnetoresistance planar Hall effect log-periodic oscillations
ISSN号	0027-8424
DOI	10.1073/pnas.2002913117
通讯作者	Li, Lin(lilin@ustc.edu.cn) ; Wang, Zhengfei(zfwang15@ustc.edu.cn) ; Zeng, Changgan(cgzeng@ustc.edu.cn)
英文摘要	The study of topological materials possessing nontrivial band structures enables exploitation of relativistic physics and development of a spectrum of intriguing physical phenomena. However, previous studies of Weyl physics have been limited exclusively to semimetals. Here, via systematic magneto-transport measurements, two representative topological transport signatures of Weyl physics, the negative longitudinal magnetoresistance and the planar Hall effect, are observed in the elemental semiconductor tellurium. More strikingly, logarithmically periodic oscillations in both the magnetoresistance and Hall data are revealed beyond the quantum limit and found to share similar characteristics with those observed in ZrTe5 and HfTe5. The log-periodic oscillations originate from the formation of two-body quasi-bound states formed between Weyl fermions and opposite charge centers, the energies of which constitute a geometric series that matches the general feature of discrete scale invariance (DSI). Our discovery reveals the topological nature of tellurium and further confirms the universality of DSI in topological materials. Moreover, introduction of Weyl physics into semiconductors to develop "Weyl semiconductors" provides an ideal platform for manipulating fundamental Weyl fermionic behaviors and for designing future topological devices.
资助项目	National Natural Science Foundation of China[11974324] ; National Natural Science Foundation of China[U1832151] ; National Natural Science Foundation of China[11804326] ; National Natural Science Foundation of China[11774325] ; National Natural Science Foundation of China[21603210] ; Strategic Priority Research Program of Chinese Academy of Sciences (CAS)[XDC07010000] ; National Key Research and Development Program of China[2017YFA0403600] ; National Key Research and Development Program of China[2017YFA0204904] ; Anhui Initiative in Quantum Information Technologies[AHY170000] ; Hefei Science Center CAS[2018HSC-UE014] ; Anhui Provincial Natural Science Foundation[1708085QA20] ; Fundamental Research Funds for the Central Universities[WK2030040087] ; Fundamental Research Funds for the Central Universities[WK3510000007] ; Science, Technology, and Innovation Commission of Shenzhen Municipality[KQTD2016022619565991]
WOS关键词	FERMIONS
WOS研究方向	Science & Technology - Other Topics
语种	英语
出版者	NATL ACAD SCIENCES
WOS记录号	WOS:000536797100027
资助机构	National Natural Science Foundation of China ; Strategic Priority Research Program of Chinese Academy of Sciences (CAS) ; National Key Research and Development Program of China ; Anhui Initiative in Quantum Information Technologies ; Hefei Science Center CAS ; Anhui Provincial Natural Science Foundation ; Fundamental Research Funds for the Central Universities ; Science, Technology, and Innovation Commission of Shenzhen Municipality
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/103109]
专题	中国科学院合肥物质科学研究院
通讯作者	Li, Lin; Wang, Zhengfei; Zeng, Changgan
作者单位	1.Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Int Ctr Quantum Design Funct Mat, Hefei 230026, Anhui, Peoples R China 2.Univ Sci & Technol China, Synerget Innovat Ctr Quantum Informat & Quantum P, Hefei 230026, Anhui, Peoples R China 3.Univ Sci & Technol China, Chinese Acad Sci Key Lab Strongly Coupled Quantum, Dept Phys, Hefei 230026, Anhui, Peoples R China 4.Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Anhui, Peoples R China 5.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China 6.Anhui Univ, Inst Phys Sci, Hefei 230601, Anhui, Peoples R China 7.Anhui Univ, Inst Informat Technol, Hefei 230601, Anhui, Peoples R China 8.Chinese Acad Sci, High Magnet Field Lab, Hefei 230031, Anhui, Peoples R China 9.Huazhong Univ Sci & Technol, Wuhan Natl High Magnet Field Ctr, Wuhan 430074, Peoples R China
推荐引用方式 GB/T 7714	Zhang, Nan,Zhao, Gan,Li, Lin,et al. Magnetotransport signatures of Weyl physics and discrete scale invariance in the elemental semiconductor tellurium[J]. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA,2020,117.
APA	Zhang, Nan.,Zhao, Gan.,Li, Lin.,Wang, Pengdong.,Xie, Lin.,...&Zeng, Changgan.(2020).Magnetotransport signatures of Weyl physics and discrete scale invariance in the elemental semiconductor tellurium.PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA,117.
MLA	Zhang, Nan,et al."Magnetotransport signatures of Weyl physics and discrete scale invariance in the elemental semiconductor tellurium".PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA 117(2020).