Improvement of GaN plasma etching uniformity by optimizing the coil electrode with plasma simulation and experimental validation

doi:10.1016/j.surfcoat.2020.126252

	Improvement of GaN plasma etching uniformity by optimizing the coil electrode with plasma simulation and experimental validation
	Xiao, Dezhi 2; Ruan, Qingdong 2; Liu, Liangliang 2; Shen, Jie 1; Cheng, Cheng 1; Chu, Paul K.2
刊名	SURFACE & COATINGS TECHNOLOGY
	2020-10-25
卷号	400
关键词	GaN Plasma etching Inductively-coupled plasma Field coupling Uniformity Plasma simulation
ISSN号	0257-8972
DOI	10.1016/j.surfcoat.2020.126252
通讯作者	Chu, Paul K.(paul.chu@cityu.edu.hk)
英文摘要	GaN-based semiconductor devices such as LEDs and power electronic devices are widely used but device fabrication can be further optimized by improving the uniformity and throughput. In inductively-coupled plasma (ICP) etching, the coil can be optimized to produce a tunable plasma distribution to improve the etching uniformity. Different from planar coils, the dual spiral decreases the electric field and magnetic field coupling between the inner and outer coils by enlarging the space without changing the equipment. The vertically arranged coils in each group can independently control plasma generation in the separate zone and tunable etching uniformity can be achieved by varying the power supplied to the inner and outer coils. The etching uniformity is improved from 5.83% to 2.95% based on maximum-minus-minimum (M-N) calculation and from 3.93% to 1.42% with the average value calculated by using the optimized coil structure. Plasma simulation and experiments confirm the source of etching non-uniformity and the knowledge is important to the fabrication of GaN-based and other devices, especially large-scale industrial production requiring low cost and 450 mm wafer capability.
资助项目	National Natural Science Foundation of China[51777206] ; City University of Hong Kong Strategic Research Grant (SRG)[7005105]
WOS关键词	INDUCTIVELY-COUPLED PLASMA ; FLUID SIMULATION ; DISCHARGE
WOS研究方向	Materials Science ; Physics
语种	英语
出版者	ELSEVIER SCIENCE SA
WOS记录号	WOS:000566384800037
资助机构	National Natural Science Foundation of China ; City University of Hong Kong Strategic Research Grant (SRG)
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/102895]
专题	中国科学院合肥物质科学研究院
通讯作者	Chu, Paul K.
作者单位	1.Chinese Acad Sci, Inst Plasma Phys, Hefei 230031, Peoples R China 2.City Univ Hong Kong, Dept Phys, Dept Mat Sci & Engn, Dept Biomed Engn,Kowloon, Tat Chee Ave, Hong Kong, Peoples R China
推荐引用方式 GB/T 7714	Xiao, Dezhi,Ruan, Qingdong,Liu, Liangliang,et al. Improvement of GaN plasma etching uniformity by optimizing the coil electrode with plasma simulation and experimental validation[J]. SURFACE & COATINGS TECHNOLOGY,2020,400.
APA	Xiao, Dezhi,Ruan, Qingdong,Liu, Liangliang,Shen, Jie,Cheng, Cheng,&Chu, Paul K..(2020).Improvement of GaN plasma etching uniformity by optimizing the coil electrode with plasma simulation and experimental validation.SURFACE & COATINGS TECHNOLOGY,400.
MLA	Xiao, Dezhi,et al."Improvement of GaN plasma etching uniformity by optimizing the coil electrode with plasma simulation and experimental validation".SURFACE & COATINGS TECHNOLOGY 400(2020).