Parasitic Ferromagnetism in Few-Layered Transition-Metal Chalcogenophosphate

doi:10.1021/jacs.0c04101

	Parasitic Ferromagnetism in Few-Layered Transition-Metal Chalcogenophosphate
	Bai, Wei 5; Hu, Zhongqiang 5; Xiao, Chong 4,5; Guo, Junqing 3; Li, Zhou 5; Zou, Youming 2; Liu, Xuguang 5; Zhao, Jiyin 5; Tong, Wei 2; Yan, Wensheng 1
刊名	JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
	2020-06-17
卷号	142
ISSN号	0002-7863
DOI	10.1021/jacs.0c04101
通讯作者	Xiao, Chong(cxiao@ustc.edu.cn) ; Xie, Yi(yxie@ustc.edu.cn)
英文摘要	Since the rise of two-dimensional (2D) semiconductors, it seems that electronic devices will soon be upgraded with spintronics, in which the manipulation of spin degree of freedom endows it obvious advantages over conventional charge-based electronics. However, as the most crucial prerequisite for the above-mentioned expectation, 2D semiconductors with adjustable magnetic interaction are still rare, which has greatly hampered the promotion of spintronics. Recently, transition metal phosphates have attracted tremendous interest due to their intrinsic antiferromagnetism and potential applications in spintronics. In the work described herein, parasitic ferromagnetism is achieved for the first time by exfoliating an antiferromagnetic chalcogenophosphate to a few layers. Taking the transition metal chalcogenophosphate Mn2P2S6 as an example, the antiferromagnetic transition at the Neel temperature is completely suppressed, and the magnetic behaviors of the as-obtained few-layered Mn2P2S6 are dominated by parasitic ferromagnetism. We experimentally verify an electron redistribution by which part of the Mn 3d electrons migrate and redistribute on P atoms in few-layered Mn2P2S6 due to the introduced Mn vacancies. The results demonstrated here broaden the tunability of the material's magnetic properties and open up a new strategy to rationally design the magnetic behaviors of 2D semiconductors, which could accelerate the applications of spintronics.
资助项目	National Key R&D Program of China[2018YFB0703602] ; National Key R&D Program of China[2017YFA0303500] ; National Key R&D Program of China[2019YFA0210000] ; National Natural Science Foundation of China[21622107] ; National Natural Science Foundation of China[U1832142] ; National Natural Science Foundation of China[21805269] ; Youth Innovation Promotion Association CAS[2016392] ; Fundamental Research Funds for the Central University[WK2340000094] ; Key Research Program of Frontier Sciences[QYZDY-SSW-SLH011] ; China Postdoctoral Science Foundation[2019TQ0293] ; National Synchrotron Radiation Laboratory Joint funds of University of Science and Technology of China[KY2340000114]
WOS关键词	X-RAY ; SPONTANEOUS MAGNETIZATION ; NEUTRON-DIFFRACTION ; MNPS3 ; MN ; ORIGINS ; ZN
WOS研究方向	Chemistry
语种	英语
出版者	AMER CHEMICAL SOC
WOS记录号	WOS:000542929600030
资助机构	National Key R&D Program of China ; National Natural Science Foundation of China ; Youth Innovation Promotion Association CAS ; Fundamental Research Funds for the Central University ; Key Research Program of Frontier Sciences ; China Postdoctoral Science Foundation ; National Synchrotron Radiation Laboratory Joint funds of University of Science and Technology of China
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/71324]
专题	中国科学院合肥物质科学研究院
通讯作者	Xiao, Chong; Xie, Yi
作者单位	1.Univ Sci Arid Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Anhui, Peoples R China 2.Chinese Acad Sci, High Magnet Field Lab HMFL, Hefei Inst Phys Sci, Hefei 230031, Anhui, Peoples R China 3.Univ Sci & Technol China, State Key Lab Particle Detect & Elect, Hefei 230026, Anhui, Peoples R China 4.Hefei Comprehens Natl Sci Ctr, Inst Energy, Hefei 230031, Anhui, Peoples R China 5.Univ Sci & Technol China, CAS Ctr Excellence Nanosci, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China
推荐引用方式 GB/T 7714	Bai, Wei,Hu, Zhongqiang,Xiao, Chong,et al. Parasitic Ferromagnetism in Few-Layered Transition-Metal Chalcogenophosphate[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,2020,142.
APA	Bai, Wei.,Hu, Zhongqiang.,Xiao, Chong.,Guo, Junqing.,Li, Zhou.,...&Xie, Yi.(2020).Parasitic Ferromagnetism in Few-Layered Transition-Metal Chalcogenophosphate.JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,142.
MLA	Bai, Wei,et al."Parasitic Ferromagnetism in Few-Layered Transition-Metal Chalcogenophosphate".JOURNAL OF THE AMERICAN CHEMICAL SOCIETY 142(2020).