AlGaN/GaN Heterojunction Bipolar Transistor With Selective-Area Grown Emitter and Improved Base Contact

	AlGaN/GaN Heterojunction Bipolar Transistor With Selective-Area Grown Emitter and Improved Base Contact
	Lian Zhang ; Zhe Cheng; Jianping Zeng ; Hongxi Lu; Lifang Jia; Yujie Ai; Yun Zhang
刊名	IEEE TRANSACTIONS ON ELECTRON DEVICES
	2019
卷号	66 期号:3 页码:1197-1201
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/29600]
专题	半导体研究所_固态光电信息技术实验室
推荐引用方式 GB/T 7714	Lian Zhang ; Zhe Cheng; Jianping Zeng ; Hongxi Lu; Lifang Jia; Yujie Ai; Yun Zhang;. AlGaN/GaN Heterojunction Bipolar Transistor With Selective-Area Grown Emitter and Improved Base Contact[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2019,66(3):1197-1201.
APA	Lian Zhang ; Zhe Cheng; Jianping Zeng ; Hongxi Lu; Lifang Jia; Yujie Ai; Yun Zhang;.(2019).AlGaN/GaN Heterojunction Bipolar Transistor With Selective-Area Grown Emitter and Improved Base Contact.IEEE TRANSACTIONS ON ELECTRON DEVICES,66(3),1197-1201.
MLA	Lian Zhang ; Zhe Cheng; Jianping Zeng ; Hongxi Lu; Lifang Jia; Yujie Ai; Yun Zhang;."AlGaN/GaN Heterojunction Bipolar Transistor With Selective-Area Grown Emitter and Improved Base Contact".IEEE TRANSACTIONS ON ELECTRON DEVICES 66.3(2019):1197-1201.