Design and fabrication of 10-kV silicon–carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension

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	Design and fabrication of 10-kV silicon–carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension
	Zheng-Xin Wen; Feng Zhang; Zhan-Wei Shen; Jun Chen; Ya-Wei He; Guo-Guo Yan; Xing-Fang Liu; Wan-Shun Zhao; Lei Wang; Guo-Sheng Sun; Yi-Ping Zeng
刊名	Chinese Physics B
	2019
卷号	28 期号:6 页码:068504
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/29562]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Zheng-Xin Wen; Feng Zhang; Zhan-Wei Shen; Jun Chen; Ya-Wei He; Guo-Guo Yan; Xing-Fang Liu; Wan-Shun Zhao; Lei Wang; Guo-Sheng Sun; Yi-Ping Zeng. Design and fabrication of 10-kV silicon–carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension[J]. Chinese Physics B,2019,28(6):068504.
APA	Zheng-Xin Wen; Feng Zhang; Zhan-Wei Shen; Jun Chen; Ya-Wei He; Guo-Guo Yan; Xing-Fang Liu; Wan-Shun Zhao; Lei Wang; Guo-Sheng Sun; Yi-Ping Zeng.(2019).Design and fabrication of 10-kV silicon–carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension.Chinese Physics B,28(6),068504.
MLA	Zheng-Xin Wen; Feng Zhang; Zhan-Wei Shen; Jun Chen; Ya-Wei He; Guo-Guo Yan; Xing-Fang Liu; Wan-Shun Zhao; Lei Wang; Guo-Sheng Sun; Yi-Ping Zeng."Design and fabrication of 10-kV silicon–carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension".Chinese Physics B 28.6(2019):068504.