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	InAs/GaSb superlattice resonant tunneling diode photodetector with InAs/AlSb double barrier structure
	Biying Nie;   Jianliang Huang;   Chengcheng Zhao;   Wenjun Huang;   Yanhua Zhang;   Yulian Cao;   Wenquan Ma
刊名	Applied Physics Letters
	2019
卷号	114页码:053509
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/29504]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Biying Nie; Jianliang Huang; Chengcheng Zhao; Wenjun Huang; Yanhua Zhang; Yulian Cao; Wenquan Ma. InAs/GaSb superlattice resonant tunneling diode photodetector with InAs/AlSb double barrier structure[J]. Applied Physics Letters,2019,114:053509.
APA	Biying Nie; Jianliang Huang; Chengcheng Zhao; Wenjun Huang; Yanhua Zhang; Yulian Cao; Wenquan Ma.(2019).InAs/GaSb superlattice resonant tunneling diode photodetector with InAs/AlSb double barrier structure.Applied Physics Letters,114,053509.
MLA	Biying Nie; Jianliang Huang; Chengcheng Zhao; Wenjun Huang; Yanhua Zhang; Yulian Cao; Wenquan Ma."InAs/GaSb superlattice resonant tunneling diode photodetector with InAs/AlSb double barrier structure".Applied Physics Letters 114(2019):053509.

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