Comparison of holes trapping and protons transport induced by low dose rate gamma radiation in oxide on different SiGe processes | |
Li, P (Li, Pei)[ 1 ]; He, CH (He, ChaoHui)[ 1 ]; Guo, HX (Guo, HongXia)[ 2,3 ]; Zhang, JX (Zhang, JinXin)[ 4 ]; Li, YH (Li, YongHong)[ 1 ]; Wei, JN (Wei, JiaNan)[ 1 ] | |
刊名 | MICROELECTRONICS RELIABILITY |
2019 | |
卷号 | 103期号:12页码:1-5 |
关键词 | SiGe HBTs Oxide isolation ELDRS EHPs generation Holes trapping Protons transportation |
ISSN号 | 0026-2714 |
DOI | 10.1016/j.microrel.2019.113499 |
英文摘要 | Space-related electronics contain different types of oxide isolations which are the crucial factor resulting in device degradation and failure. Previous studies show that the local oxidation of silicon (LOCOS) isolation Silicon-germanium heterojunction bipolar transistor (SiGe HBT) experience more significantly low dose rate sensitivity than that of shallow trench (STI) isolation SiGe HBTs and behave a "true" dose rate effect. In our work, the electron-hole pairs (EHPs) generation, holes trapped and protons transport inside oxide are simulated in LOCOS and STI isolation SiGe HBTs to explanation the different response t enhanced low dose rate sensitivity (ELDRS). The simulation results show that LOCOS oxide has a larger generation of EHPs than that of STI oxide leading to more surviving holes and protons release within oxide. |
WOS记录号 | WOS:000500386300006 |
内容类型 | 期刊论文 |
源URL | [http://ir.xjipc.cas.cn/handle/365002/7195] |
专题 | 固体辐射物理研究室 |
作者单位 | 1.Xidian Univ, Sch Aerosp Sci & Technol, Xian 710126, Shaanxi, Peoples R China 2.Northwest Inst Nucl Technol, Xian 710024, Shaanxi, Peoples R China 3.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China 4.Xi An Jiao Tong Univ, Dept Nucl Sci & Technol, Xian 710049, Shaanxi, Peoples R China |
推荐引用方式 GB/T 7714 | Li, P ,He, CH ,Guo, HX ,et al. Comparison of holes trapping and protons transport induced by low dose rate gamma radiation in oxide on different SiGe processes[J]. MICROELECTRONICS RELIABILITY,2019,103(12):1-5. |
APA | Li, P ,He, CH ,Guo, HX ,Zhang, JX ,Li, YH ,&Wei, JN .(2019).Comparison of holes trapping and protons transport induced by low dose rate gamma radiation in oxide on different SiGe processes.MICROELECTRONICS RELIABILITY,103(12),1-5. |
MLA | Li, P ,et al."Comparison of holes trapping and protons transport induced by low dose rate gamma radiation in oxide on different SiGe processes".MICROELECTRONICS RELIABILITY 103.12(2019):1-5. |
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