Systematic investigation of electrical contact barriers between different electrode metals and layered GeSe
Li, Ranran; Xia, Wei; Guo, Yanfeng; Xue, Jiamin
刊名APPLIED PHYSICS LETTERS
2019-01-07
卷号114期号:1
ISSN号0003-6951
DOI10.1063/1.5042821
文献子类Article
英文摘要For electronic and photoelectronic devices based on GeSe, an emergent two dimensional monochalcogenide with many exciting properties predicted, good electrical contacts are of great importance for achieving high device performances and exploring the intrinsic physics of GeSe. In this article, we use temperature-dependent transport measurements and thermionic emission theory for systematic investigation of the contact-barrier heights between GeSe and six common electrode metals, Al, Ag, Ti, Au, Pt, and Pd. These metals cover a wide range of work functions (from similar to 3.6 eV to similar to 5.7 eV). Our study indicates that Au forms the best contact with the valence band of GeSe even though Au does not possess the highest work function among the metals studied. This behavior clearly deviates from the expectation of Schottky-Mott theory and indicates the importance of the details at the interfaces between metals and GeSe. Published. under license by ALP Publishing.
WOS研究方向Physics
语种英语
出版者AMER INST PHYSICS
内容类型期刊论文
源URL[http://ir.sic.ac.cn/handle/331005/27405]  
专题中国科学院上海硅酸盐研究所
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Li, Ranran,Xia, Wei,Guo, Yanfeng,et al. Systematic investigation of electrical contact barriers between different electrode metals and layered GeSe[J]. APPLIED PHYSICS LETTERS,2019,114(1).
APA Li, Ranran,Xia, Wei,Guo, Yanfeng,&Xue, Jiamin.(2019).Systematic investigation of electrical contact barriers between different electrode metals and layered GeSe.APPLIED PHYSICS LETTERS,114(1).
MLA Li, Ranran,et al."Systematic investigation of electrical contact barriers between different electrode metals and layered GeSe".APPLIED PHYSICS LETTERS 114.1(2019).
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