Large current nanosecond pulse generating circuit for driving semiconductor laser diode

doi:10.1002/mop.31654

	Large current nanosecond pulse generating circuit for driving semiconductor laser diode
	Wen, Shaocong; Wang, Mao; Xie, Jie; Wu, Dongmin
刊名	MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
	2019-04-01
卷号	61 期号:4 页码:867
关键词	circuit modeling driver circuit light detection and ranging (Lidar) semiconductor lasers time-of-flight (TOF)
ISSN号	0895-2477
DOI	10.1002/mop.31654
文献子类	Article
英文摘要	The semiconductor laser diode SPL LL90_3, which integrates the RC charge-discharge circuit and a MOSFET switching device, is usually used for pulsing laser in the light detection and ranging system with a rated peak power of 70 W at 30 ns pulse-width. To further increase the peak power and reduce the pulse width and rising edge, a driving circuit with an avalanche transistor used as a pre-switching device is proposed. A trigger pulse with about 10 ns'-pulse-width is obtained to drive the laser diode. At the same time, the pulsing laser's peak power can reach 141 W at the testing repetition rate of 55 kHz.
WOS研究方向	Engineering ; Optics
语种	英语
出版者	WILEY
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/27230]
专题	中国科学院上海硅酸盐研究所
推荐引用方式 GB/T 7714	Wen, Shaocong,Wang, Mao,Xie, Jie,et al. Large current nanosecond pulse generating circuit for driving semiconductor laser diode[J]. MICROWAVE AND OPTICAL TECHNOLOGY LETTERS,2019,61(4):867.
APA	Wen, Shaocong,Wang, Mao,Xie, Jie,&Wu, Dongmin.(2019).Large current nanosecond pulse generating circuit for driving semiconductor laser diode.MICROWAVE AND OPTICAL TECHNOLOGY LETTERS,61(4),867.
MLA	Wen, Shaocong,et al."Large current nanosecond pulse generating circuit for driving semiconductor laser diode".MICROWAVE AND OPTICAL TECHNOLOGY LETTERS 61.4(2019):867.