A Novel Ultra-Sensitive Semiconductor SERS Substrate Boosted by the Coupled Resonance Effect

doi:10.1002/advs.201900310

	A Novel Ultra-Sensitive Semiconductor SERS Substrate Boosted by the Coupled Resonance Effect
	Yang, Lili; Peng, Yusi; Yang, Yong; Liu, Jianjun; Huang, Haoliang; Yu, Bohan; Zhao, Jimin; Lu, Yalin; Huang, Zhengren; Li, Zhiyuan
刊名	ADVANCED SCIENCE
	2019-06-19
卷号	6 期号:12
关键词	energy band engineering photoinduced degradation surface-enhanced Raman scattering the "coupled resonance" effect ultra-sensitive Ta2O5 nanorod substrate
DOI	10.1002/advs.201900310
文献子类	Article
英文摘要	Recent achievements in semiconductor surface-enhanced Raman scattering (SERS) substrates have greatly expanded the application of SERS technique in various fields. However, exploring novel ultra-sensitive semiconductor SERS materials is a high-priority task. Here, a new semiconductor SERS-active substrate, Ta2O5, is developed and an important strategy, the coupled resonance effect, is presented, to optimize the SERS performance of semiconductor materials by energy band engineering. The optimized Mo-doped Ta2O5 substrate exhibits a remarkable SERS sensitivity with an enhancement factor of 2.2 x 10(7) and a very low detection limit of 9 x 10(-9) m for methyl violet (MV) molecules, demonstrating one of the highest sensitivities among those reported for semiconductor SERS substrates. This remarkable enhancement can be attributed to the synergistic resonance enhancement of three components under 532 nm laser excitation: i) MV molecular resonance, ii) photoinduced charge transfer resonance between MV molecules and Ta2O5 nanorods, and iii) electromagnetic enhancement around the gap and tip of anisotropic Ta2O5 nanorods. Furthermore, it is discovered that the concomitant photoinduced degradation of the probed molecules in the time-scale of SERS detection is a non-negligible factor that limits the SERS performance of semiconductors with photocatalytic activity.
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science
语种	英语
出版者	WILEY
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/27042]
专题	中国科学院上海硅酸盐研究所
推荐引用方式 GB/T 7714	Yang, Lili,Peng, Yusi,Yang, Yong,et al. A Novel Ultra-Sensitive Semiconductor SERS Substrate Boosted by the Coupled Resonance Effect[J]. ADVANCED SCIENCE,2019,6(12).
APA	Yang, Lili.,Peng, Yusi.,Yang, Yong.,Liu, Jianjun.,Huang, Haoliang.,...&Lombardi, John R..(2019).A Novel Ultra-Sensitive Semiconductor SERS Substrate Boosted by the Coupled Resonance Effect.ADVANCED SCIENCE,6(12).
MLA	Yang, Lili,et al."A Novel Ultra-Sensitive Semiconductor SERS Substrate Boosted by the Coupled Resonance Effect".ADVANCED SCIENCE 6.12(2019).