Nonvolatile Control of the Electronic Properties of In2-xCrxO3 Semiconductor Films by Ferroelectric Polarization Charge

doi:10.1021/acsami.9b07967

	Nonvolatile Control of the Electronic Properties of In2-xCrxO3 Semiconductor Films by Ferroelectric Polarization Charge
	Xu, Meng; Yan, Jian-Min; Guo, Lei; Wang, Hui; Xu, Zhi-Xue; Yan, Ming-Yuan; Lu, Yun-Long; Gao, Guan-Yin; Li, Xiao-Guang; Luo, Hao-Su
刊名	ACS APPLIED MATERIALS & INTERFACES
	2019-09-04
卷号	11 期号:35 页码:32449
关键词	ferroelectric field effect ferroelectric single crystal electronic properties wide-band-gap oxide semiconductors films magnetoresistance
ISSN号	1944-8244
DOI	10.1021/acsami.9b07967
文献子类	Article
英文摘要	A series of Cr-doped In2-xCrxO3 (ICO) semiconductor thin films were epitaxially grown on (111)-oriented 0.71Pb(Mg1/3Nb2/3)O-3-0.29PbTiO(3) (PMN-0.29PT) single-crystal substrates by the pulsed laser deposition. Upon the application of an electric field to the PMN-0.29PT substrate along the thickness direction, we realized in situ, reversible, and nonvolatile control of the electronic properties and Fermi level of the films, which are manifested by abundant physical phenomena such as the n-type to p-type trans- formation, metal-semiconductor transition, metal-insulator transition, crossover of the magnetoresistance (MR) from negative to positive, and a large nonvolatile on-and-off ratio of 5.5 X 10(4)% at room temperature. We also strictly disclose that both the sign and the magnitude of MR are determined by the electron carrier density of ICO films, which could modify the s-d exchange interaction and weak localization effect. Our results demonstrate that the ferroelectric gating approach using PMN-PT can be utilized to gain deeper insight into the carrier-density-related electronic properties of In2O3-based semiconductors and provide a simple and energy efficient way to construct multifunctional devices which can utilize the unique properties of composite materials.
WOS研究方向	Science & Technology - Other Topics ; Materials Science
语种	英语
出版者	AMER CHEMICAL SOC
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/26852]
专题	中国科学院上海硅酸盐研究所
推荐引用方式 GB/T 7714	Xu, Meng,Yan, Jian-Min,Guo, Lei,et al. Nonvolatile Control of the Electronic Properties of In2-xCrxO3 Semiconductor Films by Ferroelectric Polarization Charge[J]. ACS APPLIED MATERIALS & INTERFACES,2019,11(35):32449.
APA	Xu, Meng.,Yan, Jian-Min.,Guo, Lei.,Wang, Hui.,Xu, Zhi-Xue.,...&Zheng, Ren-Kui.(2019).Nonvolatile Control of the Electronic Properties of In2-xCrxO3 Semiconductor Films by Ferroelectric Polarization Charge.ACS APPLIED MATERIALS & INTERFACES,11(35),32449.
MLA	Xu, Meng,et al."Nonvolatile Control of the Electronic Properties of In2-xCrxO3 Semiconductor Films by Ferroelectric Polarization Charge".ACS APPLIED MATERIALS & INTERFACES 11.35(2019):32449.