Seamless joining of silicon carbide ceramics through an sacrificial interlayer Of Dy3Si2C2

doi:10.1016/j.jeurceramsoc.2019.09.002

	Seamless joining of silicon carbide ceramics through an sacrificial interlayer Of Dy3Si2C2
	Wan, Peng; Li, Mian; Xu, Kai; Wu, Haibo; Chang, Keke; Zhou, Xiaobing; Ding, Xiangdong; Huang, Zhengren; Zong, Hongxiang; Huang, Qing
刊名	JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
	2019-12-01
卷号	39 期号:16 页码:5457
关键词	Joining Silicon carbide Ternary carbide Molten salt
ISSN号	0955-2219
DOI	10.1016/j.jeurceramsoc.2019.09.002
文献子类	Article
英文摘要	A ternary carbide Dy3Si2C2 coating was fabricated on the surface of SiC through a molten salt technique. Using the Dy3Si2C2 coating as the joining interlayer, seamless joining of SiC ceramic was achieved at temperature as low as 1500 degrees C. Phase diagram calculation indicates that seamless joining was achieved by the formation of liquid phase at the interface between Dy3Si2C2 and SiC, which was squeezed out under pressure and continuously consumed by the joining interlayer. This work implies the great potential of the family of ternary rare-earth metal carbide Re3Si2C2 (Re = Y, La-Nd) as the sacrificial interlayer for high-quality SiC joining.
WOS研究方向	Materials Science
语种	英语
出版者	ELSEVIER SCI LTD
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/26720]
专题	中国科学院上海硅酸盐研究所
推荐引用方式 GB/T 7714	Wan, Peng,Li, Mian,Xu, Kai,et al. Seamless joining of silicon carbide ceramics through an sacrificial interlayer Of Dy3Si2C2[J]. JOURNAL OF THE EUROPEAN CERAMIC SOCIETY,2019,39(16):5457.
APA	Wan, Peng.,Li, Mian.,Xu, Kai.,Wu, Haibo.,Chang, Keke.,...&Huang, Qing.(2019).Seamless joining of silicon carbide ceramics through an sacrificial interlayer Of Dy3Si2C2.JOURNAL OF THE EUROPEAN CERAMIC SOCIETY,39(16),5457.
MLA	Wan, Peng,et al."Seamless joining of silicon carbide ceramics through an sacrificial interlayer Of Dy3Si2C2".JOURNAL OF THE EUROPEAN CERAMIC SOCIETY 39.16(2019):5457.