Giant conductivity enhancement: Pressure-induced semiconductor-metal phase transition in Cd0.90Zn0.1Te

doi:10.1103/PhysRevB.99.094109

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	Giant conductivity enhancement: Pressure-induced semiconductor-metal phase transition in Cd0.90Zn0.1Te
	Saqib H.; Rahman S.; Errandonea D.; Susilo Resta A.; Jorge-Montero A.; Rodriguez-Hernandez P.; Munoz A.; sun yan; Chen Zhiqiang; Dai Ning
刊名	PHYSICAL REVIEW B
	2019
卷号	99 期号:9 页码:94109
关键词	X-RAY-DIFFRACTION RAMAN-SCATTERING BAND-GAP ELECTRONIC-STRUCTURE THERMAL-EXPANSION CDTE CDZNTE TEMPERATURE ZNTE APPROXIMATION
DOI	10.1103/PhysRevB.99.094109
英文摘要	Element doping and pressure compression may change material properties for improved performance in applications. We report pressure-induced metallization in the semiconductor Cd0.90Zn0.1Te. Transport measurements showed an overall resistivity drop of 11 orders of magnitude under compression up to 12 GPa, which is indicative of a metallization transition. X-ray diffraction measurements revealed that the sample underwent a structural transition from a cubic-F4 (3) over barm phase (zinc blende) to a cubic-Fm (3) over barm phase (rock salt) at about 5.5 GPa, followed by another transition to an orthorhombic Cmcm structure at 13 GPa. A huge volume collapse of about 18% was observed during the first phase transition, suggesting a first-order phase transition. The disappearance or weakening of Raman modes, temperature-dependent resistivity, and ab initio calculation results depict the metallic nature of both the rock-salt and Cmcm phases. The band structure changes and increased carrier density (especially at the first structural transition) are likely a consequence of the structural transition.
WOS记录号	WOS:000461950700001
内容类型	期刊论文
源URL	[http://202.127.2.71:8080/handle/181331/12394]
专题	上海技术物理研究所_上海技物所
推荐引用方式 GB/T 7714	Saqib H.,Rahman S.,Errandonea D.,et al. Giant conductivity enhancement: Pressure-induced semiconductor-metal phase transition in Cd0.90Zn0.1Te[J]. PHYSICAL REVIEW B,2019,99(9):94109.
APA	Saqib H..,Rahman S..,Errandonea D..,Susilo Resta A..,Jorge-Montero A..,...&Chen Bin.(2019).Giant conductivity enhancement: Pressure-induced semiconductor-metal phase transition in Cd0.90Zn0.1Te.PHYSICAL REVIEW B,99(9),94109.
MLA	Saqib H.,et al."Giant conductivity enhancement: Pressure-induced semiconductor-metal phase transition in Cd0.90Zn0.1Te".PHYSICAL REVIEW B 99.9(2019):94109.