Light-harvesting for high quantum efficiency in InAs-based InAs/GaAsSb type-II superlattices long wavelength infrared photodetectors

doi:10.1063/1.5086792

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	Light-harvesting for high quantum efficiency in InAs-based InAs/GaAsSb type-II superlattices long wavelength infrared photodetectors
	Huang Min; Chen Jianxin; Zhou Yi; Xu Zhicheng; He Li
刊名	APPLIED PHYSICS LETTERS
	2019
卷号	114 期号:14 页码:141102
关键词	PHOTODIODES ENHANCEMENT
DOI	10.1063/1.5086792
英文摘要	Because of the limited absorption coefficient and undesired reflection loss, it has been a challenge to obtain sufficient light absorption for type-II superlattice (T2SL) long wavelength infrared (LWIR) detectors with a thin thickness. Here, we report a greatly enhanced photon absorption by light harvesting in InAs/GaAsSb T2SLs grown on InAs substrates. High quantum efficiencies (QEs) were first observed in a set of InAs/GaAsSb superlattice LWIR photodetectors with different absorption layer thicknesses. Long minority carrier diffusion lengths are also indicated. However, these high QEs are mainly attributed to the large refractive index difference between the n-doped InAs buffer layer and the SL material, which not only improves the optical path length of incident light by multireflection in the SL material but also reduces the surface reflection by dual-layer thin-film interference at some special wavelengths. By further adjusting the doping concentration of the buffer layer, we achieved a LWIR detector with high QE of more than 60% based on InAs/GaAsSb T2SLs with a thin absorption region thickness of 3.55 μm without any antireflection coating. Our result provides an effective strategy for thin-film detectors to boost their photoresponse, especially for materials with low absorption coefficients. This work was supported by the National Natural Science Foundation of China (NSFC) (Grant Nos. 61534006, 61505237, 61505235, 61404148, and 61176082), the National Key Research and Development Program of China (Grant No. 2016YFB0402403), the Youth Innovation Promotion Association, CAS (Grant No. 2016219), and the Fund of Shanghai Science and Technology Foundation (Grant No. 16JC1400403). The authors also would like to thank Dr. Xiren Chen and Dr. Hehai Fang for their technical support and scientific discussions.
WOS记录号	WOS:000464450200002
内容类型	期刊论文
源URL	[http://202.127.2.71:8080/handle/181331/12366]
专题	上海技术物理研究所_上海技物所
推荐引用方式 GB/T 7714	Huang Min,Chen Jianxin,Zhou Yi,et al. Light-harvesting for high quantum efficiency in InAs-based InAs/GaAsSb type-II superlattices long wavelength infrared photodetectors[J]. APPLIED PHYSICS LETTERS,2019,114(14):141102.
APA	Huang Min,Chen Jianxin,Zhou Yi,Xu Zhicheng,&He Li.(2019).Light-harvesting for high quantum efficiency in InAs-based InAs/GaAsSb type-II superlattices long wavelength infrared photodetectors.APPLIED PHYSICS LETTERS,114(14),141102.
MLA	Huang Min,et al."Light-harvesting for high quantum efficiency in InAs-based InAs/GaAsSb type-II superlattices long wavelength infrared photodetectors".APPLIED PHYSICS LETTERS 114.14(2019):141102.