DNA Nanotweezers and Graphene Transistor Enable Label-Free Genotyping

doi:10.1002/adma.201802440

CORC > 上海应用物理研究所 > 中国科学院上海应用物理研究所 > 中科院上海应用物理研究所2011-2017年

	DNA Nanotweezers and Graphene Transistor Enable Label-Free Genotyping
	Hwang, MT ; Wang, ZJ ; Ping, JL ; Ban, DK ; Shiah, ZC ; Antonschmidt, L ; Lee, J ; Liu, YS ; Karkisaval, AG ; Johnson, ATC
刊名	ADVANCED MATERIALS
	2018
卷号	30 期号:34 页码:-
关键词	PARTIAL STRAND DISPLACEMENT FIELD-EFFECT TRANSISTORS COMMON HUMAN DISORDERS ALZHEIMERS-DISEASE SILICON NANOWIRE PLATFORM CANCER IDENTIFICATION POLYMORPHISMS ASSOCIATION
ISSN号	0935-9648
DOI	10.1002/adma.201802440
文献子类	期刊论文
英文摘要	Electronic DNA-biosensor with a single nucleotide resolution capability is highly desirable for personalized medicine. However, existing DNA-biosensors, especially single nucleotide polymorphism (SNP) detection systems, have poor sensitivity and specificity and lack real-time wireless data transmission. DNA-tweezers with graphene field effect transistor (FET) are used for SNP detection and data are transmitted wirelessly for analysis. Picomolar sensitivity of quantitative SNP detection is achieved by observing changes in Dirac point shift and resistance change. The use of DNA-tweezers probe with high-quality graphene FET significantly improves analytical characteristics of SNP detection by enhancing the sensitivity more than 1000-fold in comparison to previous work. The electrical signal resulting from resistance changes triggered by DNA strand-displacement and related changes in the DNA geometry is recorded and transmitted remotely to personal electronics. Practical implementation of this enabling technology will provide cheaper, faster, and portable point-of-care molecular health status monitoring and diagnostic devices.
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinap.ac.cn/handle/331007/30909]
专题	上海应用物理研究所_中科院上海应用物理研究所2011-2017年
作者单位	1.Univ Calif San Diego, Dept Bioengn, 9500 Gilman Dr, La Jolla, CA 92093 USA 2.Max Planck Inst Biophys Chem, NMR Based Struct Biol, Fassberg 11, D-37077 Gottingen, Germany 3.Inner Mongolia Agr Univ, Sch Life Sci, 306 Zhaowuda Rd, Hohhot 010018, Peoples R China 4.Univ Calif San Diego, Inst Engn Med, 9500 Gilman Dr, La Jolla, CA 92093 USA 5.Univ Calif San Diego, Mat Sci & Engn Program, 9500 Gilman Dr, La Jolla, CA 92093 USA 6.Univ Chinese Acad Sci, Chinese Acad Sci, Shanghai Inst Appl Phys, Div Phys Biol, Shanghai 201800, Peoples R China 7.Univ Chinese Acad Sci, Chinese Acad Sci, Shanghai Inst Appl Phys,CAS Key Lab Interfacial P, Bioimaging Ctr,Shanghai Synchrotron Radiat Facil, Shanghai 201800, Peoples R China 8.Univ Penn, Dept Phys & Astron, Philadelphia, PA 19104 USA 9.Univ Calif San Diego, Dept Mech & Aerosp Engn, 9500 Gilman Dr, La Jolla, CA 92093 USA 10.Univ Calif San Diego, Dept Elect & Comp Engn, 9500 Gilman Dr, La Jolla, CA 92093 USA
推荐引用方式 GB/T 7714	Hwang, MT,Wang, ZJ,Ping, JL,et al. DNA Nanotweezers and Graphene Transistor Enable Label-Free Genotyping[J]. ADVANCED MATERIALS,2018,30(34):-.
APA	Hwang, MT.,Wang, ZJ.,Ping, JL.,Ban, DK.,Shiah, ZC.,...&Lal, R.(2018).DNA Nanotweezers and Graphene Transistor Enable Label-Free Genotyping.ADVANCED MATERIALS,30(34),-.
MLA	Hwang, MT,et al."DNA Nanotweezers and Graphene Transistor Enable Label-Free Genotyping".ADVANCED MATERIALS 30.34(2018):-.