Boosting Perovskite Light-Emitting Diode Performance via Tailoring Interfacial Contact

doi:10.1021/acsami.8b07438

CORC > 上海应用物理研究所 > 中国科学院上海应用物理研究所 > 中科院上海应用物理研究所2011-2017年

	Boosting Perovskite Light-Emitting Diode Performance via Tailoring Interfacial Contact
	Zou, YT ; Ban, MY ; Yang, YG ; Bai, S ; Wu, C ; Han, YJ ; Wu, T ; Tan, YS ; Huang, Q ; Gao, XY
刊名	ACS APPLIED MATERIALS & INTERFACES
	2018
卷号	10 期号:28 页码:24320-24326
关键词	ORGANOMETAL HALIDE PEROVSKITE SOLAR-CELLS EFFICIENT PASSIVATION DEVICES PHOTOLUMINESCENCE FILMS
ISSN号	1944-8244
DOI	10.1021/acsami.8b07438
文献子类	期刊论文
英文摘要	Solution-processed perovskite light-emitting diodes (LEDs) have attracted wide attention in the past several years. However, the overall efficiency and stability of perovskite-based LEDs remain inferior to those of organic or quantum dot LEDs. Nonradiative charge recombination and the unbalanced charge injection are two critical factors that limit the device efficiency and operational stability of perovskite LEDs. Here, we develop a strategy to modify the interface between the hole transport layer and the perovskite emissive layer with an amphiphilic conjugated polymer of poly[(9,9-bis(3'-(N,N-dimethylamino)propy1)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)] (PFN). We show evidences that PFN improves the quality of the perovskite film, which effectively suppresses nonradiative recombination. By further improving the charge injection balance rate, a green perovskite LED with a champion current efficiency of 45.2 cd/A, corresponding to an external quantum efficiency of 14.4%, is achieved. In addition, the device based on the PFN layer exhibits improved operational lifetime. Our work paves a facile way for the development of efficient and stable perovskite LEDs.
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinap.ac.cn/handle/331007/30867]
专题	上海应用物理研究所_中科院上海应用物理研究所2011-2017年
作者单位	1.Linkoping Univ, Dept Phys Chem & Biol IFM, SE-58183 Linkoping, Sweden 2.Soochow Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, 199 Renai Rd, Suzhou 215123, Peoples R China 3.Chinese Acad Sci, Shanghai Inst Appl Phys, SSRF, Pudong New Area, 239 Zhangheng Rd, Shanghai 201204, Peoples R China 4.Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Funct Mat & Devices, 199 Renai Rd, Suzhou 215123, Peoples R China
推荐引用方式 GB/T 7714	Zou, YT,Ban, MY,Yang, YG,et al. Boosting Perovskite Light-Emitting Diode Performance via Tailoring Interfacial Contact[J]. ACS APPLIED MATERIALS & INTERFACES,2018,10(28):24320-24326.
APA	Zou, YT.,Ban, MY.,Yang, YG.,Bai, S.,Wu, C.,...&Sun, BQ.(2018).Boosting Perovskite Light-Emitting Diode Performance via Tailoring Interfacial Contact.ACS APPLIED MATERIALS & INTERFACES,10(28),24320-24326.
MLA	Zou, YT,et al."Boosting Perovskite Light-Emitting Diode Performance via Tailoring Interfacial Contact".ACS APPLIED MATERIALS & INTERFACES 10.28(2018):24320-24326.