An Oxide Schottky Junction Artificial Optoelectronic Synapse

	An Oxide Schottky Junction Artificial Optoelectronic Synapse
	Gao, Shuang ; Liu, Gang ; Yang, Huali ; Hu, Chao ; Chen, Qilai ; Gong, Guodong ; Xue, Wuhong ; Yi, Xiaohui ; Shang, Jie ; Li, Run-Wei
刊名	ACS NANO
	2019
卷号	13 期号:2 页码:2634-2642
关键词	WORK FUNCTION MEMRISTOR MEMORY MECHANISMS PLASTICITY DEVICE
DOI	10.1021/acsnano.9b00340
英文摘要	An Oxide Schottky Junction Artificial Optoelectronic Synapse
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/18577]
专题	2019专题
作者单位	1.Liu, G 2.Li, RW (reprint author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, CAS Key Lab Magnet Mat & Devices, Ningbo 315201, Zhejiang, Peoples R China. 3.Li, RW (reprint author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Zhejiang Prov Key Lab Magnet Mat & Applicat Techn, Ningbo 315201, Zhejiang, Peoples R China.
推荐引用方式 GB/T 7714	Gao, Shuang,Liu, Gang,Yang, Huali,et al. An Oxide Schottky Junction Artificial Optoelectronic Synapse[J]. ACS NANO,2019,13(2):2634-2642.
APA	Gao, Shuang.,Liu, Gang.,Yang, Huali.,Hu, Chao.,Chen, Qilai.,...&Li, Run-Wei.(2019).An Oxide Schottky Junction Artificial Optoelectronic Synapse.ACS NANO,13(2),2634-2642.
MLA	Gao, Shuang,et al."An Oxide Schottky Junction Artificial Optoelectronic Synapse".ACS NANO 13.2(2019):2634-2642.