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	Nanoscale magnetization reversal by electric field-induced ion migration
	Chen, Qilai; Liu, Gang; Gao, Shuang; Yi, Xiaohui; Xue, Wuhong; Tang, Minghua; Zheng, Xuejun; Li, Run-Wei
刊名	MRS COMMUNICATIONS
	2019
卷号	9期号:1页码:14-26
关键词	RESISTIVE SWITCHING MEMORIES ROOM-TEMPERATURE ATOMIC LAYERS MAGNETORESISTANCE MANIPULATION FERROMAGNETISM NANOIONICS ANISOTROPY MEMRISTOR PROSPECTS
DOI	10.1557/mrc.2018.191
英文摘要	Nanoscale magnetization reversal by electric field-induced ion migration
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/18504]
专题	2019专题
作者单位	1.Zheng, XJ (reprint author), Xiangtan Univ, Sch Mech Engn, Xiangtan 411105, Hunan, Peoples R China. 2.Li, RW (reprint author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, CAS Key Lab Magnet Mat & Devices, Ningbo 315201, Zhejiang, Peoples R China. 3.Liu, G 4.Li, RW (reprint author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Zhejiang Prov Key Lab Magnet Mat & Applicat Techn, Ningbo 315201, Zhejiang, Peoples R China.
推荐引用方式 GB/T 7714	Chen, Qilai,Liu, Gang,Gao, Shuang,et al. Nanoscale magnetization reversal by electric field-induced ion migration[J]. MRS COMMUNICATIONS,2019,9(1):14-26.
APA	Chen, Qilai.,Liu, Gang.,Gao, Shuang.,Yi, Xiaohui.,Xue, Wuhong.,...&Li, Run-Wei.(2019).Nanoscale magnetization reversal by electric field-induced ion migration.MRS COMMUNICATIONS,9(1),14-26.
MLA	Chen, Qilai,et al."Nanoscale magnetization reversal by electric field-induced ion migration".MRS COMMUNICATIONS 9.1(2019):14-26.

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