Unlocking Few-Layered Ternary Chalcogenides for High-Performance Potassium-Ion Storage

	Unlocking Few-Layered Ternary Chalcogenides for High-Performance Potassium-Ion Storage
	Tian, Huajun ; Yu, Xuechao ; Shao, Hezhu ; Dong, Liubing ; Chen, Yi ; Fang, Xioqin ; Wang, Chengyin ; Han, Weiqiong ; Wang, Guoxiu
刊名	ADVANCED ENERGY MATERIALS
	2019
卷号	9 期号:29
关键词	MOS2 NANOSHEETS IN-SITU ELECTRODE PHASE TIS2
DOI	10.1002/aenm.201901560
英文摘要	Unlocking Few-Layered Ternary Chalcogenides for High-Performance Potassium-Ion Storage
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/18092]
专题	2019专题
作者单位	1.Han, WQ (reprint author), Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China. 2.Wang, GX (reprint author), Univ Technol Sydney, Ctr Clean Energy Technol, Sydney, NSW 2007, Australia.
推荐引用方式 GB/T 7714	Tian, Huajun,Yu, Xuechao,Shao, Hezhu,et al. Unlocking Few-Layered Ternary Chalcogenides for High-Performance Potassium-Ion Storage[J]. ADVANCED ENERGY MATERIALS,2019,9(29).
APA	Tian, Huajun.,Yu, Xuechao.,Shao, Hezhu.,Dong, Liubing.,Chen, Yi.,...&Wang, Guoxiu.(2019).Unlocking Few-Layered Ternary Chalcogenides for High-Performance Potassium-Ion Storage.ADVANCED ENERGY MATERIALS,9(29).
MLA	Tian, Huajun,et al."Unlocking Few-Layered Ternary Chalcogenides for High-Performance Potassium-Ion Storage".ADVANCED ENERGY MATERIALS 9.29(2019).