Recent Advances of Quantum Conductance in Memristors

	Recent Advances of Quantum Conductance in Memristors
	Xue, Wuhong ; Gao, Shuang ; Shang, Jie ; Yi, Xiaohui ; Liu, Gang ; Li, Run-Wei
刊名	ADVANCED ELECTRONIC MATERIALS
	2019
卷号	5 期号:9
关键词	QUANTIZED CONDUCTANCE METALLIC NANOWIRES RESISTIVE MEMORY DEVICES NANOFILAMENTS MECHANISMS NUCLEATION PLASTICITY TRANSPORT FILAMENTS
DOI	10.1002/aelm.201800854
英文摘要	Recent Advances of Quantum Conductance in Memristors
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/17999]
专题	2019专题
作者单位	1.Li, RW (reprint author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, CAS Key Lab Magnet Mat & Devices, Ningbo 315201, Zhejiang, Peoples R China. 2.Li, RW (reprint author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Zhejiang Prov Key Lab Magnet Mat & Applicat Techn, Ningbo 315201, Zhejiang, Peoples R China.
推荐引用方式 GB/T 7714	Xue, Wuhong,Gao, Shuang,Shang, Jie,et al. Recent Advances of Quantum Conductance in Memristors[J]. ADVANCED ELECTRONIC MATERIALS,2019,5(9).
APA	Xue, Wuhong,Gao, Shuang,Shang, Jie,Yi, Xiaohui,Liu, Gang,&Li, Run-Wei.(2019).Recent Advances of Quantum Conductance in Memristors.ADVANCED ELECTRONIC MATERIALS,5(9).
MLA	Xue, Wuhong,et al."Recent Advances of Quantum Conductance in Memristors".ADVANCED ELECTRONIC MATERIALS 5.9(2019).