Charge state effect on K-shell ionization of silicon induced by iodine(q+) ions

doi:10.1140/epjd/e2018-80772-0

	Charge state effect on K-shell ionization of silicon induced by iodine(q+) ions
	Lei, Yu1,3 ; Cheng, Rui3 ; Zhou, Xianming1,3 ; Wang, Xing 2; Wang, Yuyu3 ; Ren, Jieru 2; Zhao, Yongtao2,3 ; Ma, Xinwen3 ; Xiao, Guoqing3
刊名	EUROPEAN PHYSICAL JOURNAL D
	2018-08-02
卷号	72 页码:132
ISSN号	1434-6060
DOI	10.1140/epjd/e2018-80772-0
英文摘要	In near Bohr velocity ion-atom collisions, a dependence of target K-shell ionization cross sections upon the ionic charge states has been observed. Experiments were performed in silicon solid target with 2-5 MeV iodine(q+) ions incident in charge states +20 to +25. K-shell ionization cross section of silicon for q = 20 and 22 iodine ions impact with the same incident energy are almost equal, and are well described by the theory of binding-energy-modified BEA. However, for q = 25 iodine ions collisions, 3d vacancies of projectile transfer to the 1s orbit of target atom via rotational coupling of 3d pi, delta-3d sigma molecular orbits in the framework of quasi-molecular model, which results in an increase of the K-shell ionization cross section of silicon.
资助项目	Major State Basic Research Development Program of China[2017YFA0402300] ; National Natural Science Foundation of China (NSFC)[11775278] ; National Natural Science Foundation of China (NSFC)[11205225] ; National Natural Science Foundation of China (NSFC)[11505248] ; National Natural Science Foundation of China (NSFC)[11375034] ; National Natural Science Foundation of China (NSFC)[11275241] ; National Natural Science Foundation of China (NSFC)[U1532263]
WOS关键词	X-RAY-PRODUCTION ; IMPACT-PARAMETER DEPENDENCE ; ATOM COLLISIONS ; CROSS-SECTIONS ; VACANCY PRODUCTION ; HEAVY-IONS ; 2-PARTICLE COLLISIONS ; MULTIPLE IONIZATION ; LABORATORY SYSTEM ; CARBON-IONS
WOS研究方向	Optics ; Physics
语种	英语
出版者	SPRINGER
WOS记录号	WOS:000440755200002
资助机构	Major State Basic Research Development Program of China ; National Natural Science Foundation of China (NSFC)
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/59150]
专题	近代物理研究所_实验物理中心
作者单位	1.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 2.Xi An Jiao Tong Univ, Sch Sci, Xian 710049, Shaanxi, Peoples R China 3.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China
推荐引用方式 GB/T 7714	Lei, Yu,Cheng, Rui,Zhou, Xianming,et al. Charge state effect on K-shell ionization of silicon induced by iodine(q+) ions[J]. EUROPEAN PHYSICAL JOURNAL D,2018,72:132.
APA	Lei, Yu.,Cheng, Rui.,Zhou, Xianming.,Wang, Xing.,Wang, Yuyu.,...&Xiao, Guoqing.(2018).Charge state effect on K-shell ionization of silicon induced by iodine(q+) ions.EUROPEAN PHYSICAL JOURNAL D,72,132.
MLA	Lei, Yu,et al."Charge state effect on K-shell ionization of silicon induced by iodine(q+) ions".EUROPEAN PHYSICAL JOURNAL D 72(2018):132.