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	Semiconductor device
	SAITOU KATSUTOSHI; MORI MITSUHIRO; MORI TAKAO; SATOU NOBU; KOBAYASHI MASAYOSHI; CHIBA KATSUAKI; KATOU HIROSHI; KOBAYASHI MASAMICHI
	1983-05-10
著作权人	HITACHI SEISAKUSHO KK
专利号	JP1983077259A
国家	日本
文献子类	发明申请
其他题名	Semiconductor device
英文摘要	PURPOSE:To prevent the separation of a wiring of semiconductor device by a method wherein a binder of thin film of Ti, Cr, etc., having favorable adhesion is provided between a barrier metal of Mo, etc., and the metal wiring. CONSTITUTION:An N type GaAlAs clad layer 6, an N type GaAlAs active layer 7, a P type GaAlAs clad layer 8, and an N type GaAs layers 9 are formed on an N type GaAs substrate 1 according to the liquid phase growth method, a mask 10 having a slender opening of 2mum width is provided on the layer 9, and Zn is diffused to form a P type layer 1 Then an ohmically connecting layer 12 of Ti or Cr, an Mo barrier metal layer 4, and a binder layer 13 of Ti or Cr are evaporated in order, and an electrode wiring layer 4 of Au or Ag is adhered. After thickness of the substrate 1 is regulated to about 100mum, an AuGe layer 14, an Ni layer 15 are evaporated, a binder layer 13 of Ti or Cr is accumulated, and an electrode 5 of Au or Ag is adhered to complete. By this constitution, the separation of the electrode wiring can be prevented.
公开日期	1983-05-10
申请日期	1981-11-04
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/82886]
专题	半导体激光器专利数据库
作者单位	HITACHI SEISAKUSHO KK
推荐引用方式 GB/T 7714	SAITOU KATSUTOSHI,MORI MITSUHIRO,MORI TAKAO,et al. Semiconductor device. JP1983077259A. 1983-05-10.

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