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	Double heterojunction light emitting diodes and laser diodes having quantum dot silicon light emitters
	TORVIK, JOHN TARJE
	2005-08-09
著作权人	ASTRALUX, INC.
专利号	US6927422
国家	美国
文献子类	授权发明
其他题名	Double heterojunction light emitting diodes and laser diodes having quantum dot silicon light emitters
英文摘要	A direct-wafer-bonded, double heterojunction, light emitting semiconductor device includes an ordered array of quantum dots made of one or more indirect band gap materials selected from a group consisting of Si, Ge, SiGe, SiGeC, 3C—SiC, and hexagonal SiC, wherein the quantum dots are sandwiched between an n-type semiconductor cladding layer selected from a group consisting of SiC, 3C—SiC, 4H—SiC, 6H—SiC and diamond, and a p-type semiconductor cladding layer selected from a group consisting of SiC, 3C—SiC, 4H—SiC, 6H—SiC and diamond. A Ni contact is provided for the n-type cladding layer. An Al, a Ti or an Al/Ti alloy contact is provided for the p-type cladding layer. The quantum dots have a thickness that is no greater than about 250 Angstroms, a width that is no greater than about 200 Angstroms, and a center-to-center spacing that is in the range of from about 10 Angstroms to about 1000 Angstroms.
公开日期	2005-08-09
申请日期	2003-05-06
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/82201]
专题	半导体激光器专利数据库
作者单位	ASTRALUX, INC.
推荐引用方式 GB/T 7714	TORVIK, JOHN TARJE. Double heterojunction light emitting diodes and laser diodes having quantum dot silicon light emitters. US6927422. 2005-08-09.

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