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	Manufacture of semiconductor laser device
	ATSUNUSHI FUMIHIRO; OKUMURA TOSHIYUKI; MORIOKA TATSUYA
	1992-11-16
著作权人	SHARP CORP
专利号	JP1992326786A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor laser device
英文摘要	PURPOSE:To make small the oscillating threshold current and improve element property by providing a stripe-shaped laminate structure, which includes an active layer on a semiconductor substrate, and providing burying layers on both sides of the laminate structure. CONSTITUTION:An amorphous dielectric film 10 consisting of an Si3N4 film is formed on an n-InP substrate doped with Sn having a (100) face, and then a trench 101, which reaches the substrate 1, is made in the direction of [011]. On the substrate inside the trench 101 are stacked an n-InP clad layer 2 doped with Si, a nondoped GaInAsP active layer 3, a p-InP clad layer 4 doped with Zn, and a p-GaInAsP contact layer 5 doped with Zn. After removal of the dielectric film 10, a current block layer is made, which consists of a p-InP layer 6 doped with Zn and an n-InP layer 7 doped with Si. After removal of the p-InP layer 6 and the n-InP layer 7 made on the stripe-shaped multilayer film, on the surface of the p-GaInAsP contact layer is made an AuGe/Ni electrode 8 and on the rear of the n-InP substrate 1 is made an AuZn/Au electrode 9.
公开日期	1992-11-16
申请日期	1991-04-26
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/82109]
专题	半导体激光器专利数据库
作者单位	SHARP CORP
推荐引用方式 GB/T 7714	ATSUNUSHI FUMIHIRO,OKUMURA TOSHIYUKI,MORIOKA TATSUYA. Manufacture of semiconductor laser device. JP1992326786A. 1992-11-16.

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