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	Optical integrated circuit device
	TAKIGAWA SHINICHI; ITO KUNIO; KANO KOTA
	1987-12-23
著作权人	MATSUSHITA ELECTRIC IND CO LTD
专利号	JP1987296557A
国家	日本
文献子类	发明申请
其他题名	Optical integrated circuit device
英文摘要	PURPOSE:To obtain an optical integrated circuit capable of operating at high speed by manufacturing an MESFET to a p-type GaAs growth layer in a BTRS type laser and making a source section in the MESFET and an internal stripe section in the BTRS type laser common. CONSTITUTION:p-type GaAs 2 is grown on a semi-insulating GaAs substrate 1, a stripe is formed to a section as a laser, n-type GaAs 3 is grown, and a ridge is shaped to the stripe section. A p-type AlGaAs clad layer 4, an AlGaAs active layer 5, an n-type AlGaAs clad layer 6 and an ntype AlGaAs cap layer 7 are grown in succession, and growth layers except a section as the laser are etched through a photolithographic techanique. The p-type GaAs 2 in not etched because it is used as an active layer in an MESFET at that time. A laser n-type electrode 8 and an FET drain electrode 9 are vacuum-deposited, and alloyed, and lastly a gate electrode 10 is shaped.
公开日期	1987-12-23
申请日期	1986-06-17
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/81562]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	TAKIGAWA SHINICHI,ITO KUNIO,KANO KOTA. Optical integrated circuit device. JP1987296557A. 1987-12-23.

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