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	Semiconductor laser device
	KAYANE NAOKI; KURODA TAKAROU
	1983-11-09
著作权人	HITACHI SEISAKUSHO KK
专利号	JP1983192394A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To manufacture a phased array type element with high output, low threshold value and excellent optical junction of arrays with each other by a method wherein the luminous output surface is covered with a material comprising a laser and a transparent film crystally connected on a laser device with two each or more laser luminous unit subject to optical junction with each other. CONSTITUTION:N type Ga0.6Al0.4As layer 3, Ga0.9Al0.1As active layer 4, P type Ga0.6Al0.4 As layer 5 are liquid epitaxially grown on GaAs substrate 2 further forming N type GaAs cap layer 6 thereon. Next an SiO2 film and both ends of the laminated layers are etched down to the substrate 2 from the top layer 6 while P type Ga0.6Al0.4 As layer 9 is grown on the etched part with the mask left as it is. Then stripe type Zn diffused regions 10-14 are formed up to the active layer 4 while the rear side of substrate 2 and the upper surface of the layer 6 are respectively coated with electrodes 1 and 7. Through these procedures, the area near the laser beam emitting end is covered with the layer 9 restraining the deterioration of the end in case of large output.
公开日期	1983-11-09
申请日期	1982-05-07
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/81518]
专题	半导体激光器专利数据库
作者单位	HITACHI SEISAKUSHO KK
推荐引用方式 GB/T 7714	KAYANE NAOKI,KURODA TAKAROU. Semiconductor laser device. JP1983192394A. 1983-11-09.

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