QQ客服 官方微博 反馈留言

	Semiconductor laser
	TSUNEKAWA YOSHIFUMI
	1988-03-18
著作权人	SEIKO EPSON CORP
专利号	JP1988062289A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To provide stable high output characteristics in a semiconductor laser by bending an active layer and a clad layer with respect to the center of a resonator near the end face of the resonator, and forming a non-light- absorbing layer connected to the active layer to form the resonator of a window in a clad layer having larger forbidden band width than the active layer. CONSTITUTION:A lower clad layer 103, an active layer 102, an upper clad layer 104 and a cap layer 105 are continuously grown on a GaAs substrate 10 Then, an insulating film 106 of a silicon nitride film or a silicon oxide film is formed, and only a current injection part is formed in a stripe shape in an etching step. The layer 103 is bent to the substrate at the end of the resonator by the step of the substrate 10 Accordingly, the light oscillated at the center of the stripe is resonated through the layer 104 at the upside of the active layer. The clad layer is formed of a material having larger forbidden band width than the active layer for realizing the effects of the light and carrier confinement. Therefore, the end of the resonator becomes completely transparent for the light oscillated at the layer 103 to raise the upper limit optical output limited by the end face breakdown, thereby performing a high output LD.
公开日期	1988-03-18
申请日期	1986-09-02
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/81389]
专题	半导体激光器专利数据库
作者单位	SEIKO EPSON CORP
推荐引用方式 GB/T 7714	TSUNEKAWA YOSHIFUMI. Semiconductor laser. JP1988062289A. 1988-03-18.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。