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	面発光型半導体レーザの製造方法
	古沢 浩太郎; 茨木 晃; 川島 健児; 石川 徹
	1998-12-18
著作权人	科学技術振興事業団
专利号	JP2864258B2
国家	日本
文献子类	授权发明
其他题名	面発光型半導体レーザの製造方法
英文摘要	PURPOSE:To make it possible to form a very small section to be buried which has a small dependence upon crystal azimuth performance and remove etching mask completely by using a laminated layer body of an SiO2 film and a resist layer as a mask, and then carrying out chemical etching for GaAlAs and the SiO2 film. CONSTITUTION:A buffer layer 2, a first clad layer 3, an activity layer 4, a second clad layer 5, a cap layer 6, and a first mask layer 7 are formed continuously on a substrate On the mask layer 7 there are formed an SiO2 film 8 and further a resist layer 9. The SiO2 film 8 excepting the area where the resist layer 9 is formed is removed by etching with an etchant for SiO2. Then, a lamination layer body of the SiO2 film 8 and the resist layer 9, which is used as a mask, is etched up to a section directly over the first clad layer 3 so that a round-shaped mesa section may be formed. Then, the first mask layer 7 is side-etched with a GaAlAs etchant and a non-reactive section 8a of the SiO2 film 8 is exposed. After that process is over, the SiO2 film 8 is etched and removed with the etchant for SiO2. During this operation, both the resist layer 9 and a reactant 10 are removed.
公开日期	1999-03-03
申请日期	1989-12-05
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/81156]
专题	半导体激光器专利数据库
作者单位	科学技術振興事業団
推荐引用方式 GB/T 7714	古沢 浩太郎,茨木 晃,川島 健児,等. 面発光型半導体レーザの製造方法. JP2864258B2. 1998-12-18.

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