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	Semiconductor laser
	UENO SHINSUKE
	1986-07-21
著作权人	NEC CORP
专利号	JP1986160988A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To obtain the titled device excellent in controllability and reproducibility which generates stable self-excited oscillation, having low-noise characteristic, and which keeps stable lateral mode oscillation, having excellent laser oscillation characteristics, by a method wherein the ratio of gain coefficients and the ratio of carrier spontaneous lifetimes between an active region and an absorption region are made to have specific relations. CONSTITUTION:A semiconductor laser, having the multilayer structure of sandwiching an active layer 12 by semiconductor layers 11, 13 having larger band gaps than the active layer 12, and provided with a stripe active region 21 in the longitudinal direction of the resonator, is provided with an absorption region 17 partly in the longitudinal direction of the resonator. When the length ratio of the active region 21 to the absorption region 17 is (1-h):h and the loss resulting from normalizing the loss alpha of the absorption region 21 by means of a cavity loss GAMMA is beta(identicalhalpha/GAMMA), the ratio g1/g2 of gain coefficients g and the ratio tau1/tau2 of carrier spontaneous lifetimes between both the regions are so made as to have relations of (tau1/tau2).(g1/g2)>(-beta)/(1-beta) and tau1/tau2>{1/(1-h)}.{(1-beta)/(-beta)}.(g1/g2)+
公开日期	1986-07-21
申请日期	1985-01-09
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/80770]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	UENO SHINSUKE. Semiconductor laser. JP1986160988A. 1986-07-21.

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