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	Semiconductor light emitting device
	TABUCHI HARUHIKO
	1985-11-21
著作权人	FUJITSU KK
专利号	JP1985234391A
国家	日本
文献子类	发明申请
其他题名	Semiconductor light emitting device
英文摘要	PURPOSE:To enable to change the oscillation wave length at high speed electrically, by a method wherein a conduction shape of a crystal layer of striped type is made different from conduction shapes of crystal layers which surround this from upside and downside, and makes it possible to apply bias electric voltage conversely to the connection of the stripe type crystal layer and surrounding layers. CONSTITUTION:An n type InP clad layer 42, an InGaAsP active layer 43, a P type InGaAsP layer 51 are formed in order. Subsequently, SiO2 52 are formed at opposite ends, and then photo-resist 53 is coated, and He-Cd laser light 54 is irradiated from two direction, and the exposure is carried out. Then, photo-resist 53 at the hatching applied parts 55 is removed, and the n type InGaAsP layers 51 are removed in ruggedness making photo-resist 53 and SiO2 52 as mask, then photo-resist 53 is removed leaving SiO2 52 at the ends. Subsequently, a P type InP clad layer 45 and an n type InGaAsP cap layer 46 are formed, and a striped type electric current passage is formed diffusing P type inpurities in the striped type on the (f) of the n type InGaAsP cap layer 46. After that, electrodes 47, 48, 49, and 50 are formed.
公开日期	1985-11-21
申请日期	1984-05-07
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/80744]
专题	半导体激光器专利数据库
作者单位	FUJITSU KK
推荐引用方式 GB/T 7714	TABUCHI HARUHIKO. Semiconductor light emitting device. JP1985234391A. 1985-11-21.

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