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	Manufacture of semiconductor element
	MURAKAMI TOMOKI
	1987-08-14
著作权人	NEC CORP
专利号	JP1987186525A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor element
英文摘要	PURPOSE:To obtain a semiconductor element, whose element characteristics are improved, by forming a thin film comprising a material, whose dissociation pressure is lower than that of a semiconductor substrate on the semiconductor substrate, and providing a plurality of recess parts on the semiconductor substrate. CONSTITUTION:A thin film 2, which comprises a material, whose dissociation pressure is lower than that of a substrate 1, e.g., GaAs, and has a thickness of 1-3,000Angstrom , is formed on a semiconductor, e.g., the InP substrate A plurality of recess parts 3 reaching the upper part of the substrate 1 are formed from the thin film 2. Epitaxial layers 4-6 are formed on the substrate 1, in which the recess parts 3 are formed. Then the epitaxial layers 4, 5 and 6 are formed without the deformation of the shapes of the recess parts 3 due to heating. Thus, the semiconductor element, whose element characteristics are improved, is obtained.
公开日期	1987-08-14
申请日期	1986-02-12
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/80707]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	MURAKAMI TOMOKI. Manufacture of semiconductor element. JP1987186525A. 1987-08-14.

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