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	Manufacture of semiconductor laser
	WATANABE YUKIO
	1985-04-16
著作权人	TOSHIBA KK
专利号	JP1985066486A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor laser
英文摘要	PURPOSE:To make high output operation with low threshold value current feasible and production easier by a method wherein a substrate held at high temperature for specific period of time is crystal-grown utilizing super-refrigerated solution and then a stepped part is selectively melt-back to form a self-aligned current strangulated part. CONSTITUTION:A stepwise different part is provided on a P type substrate 31 and an N type current strangulating layer 32 is grown on the surface of the substrate 31 not to disturb the stepwise shape of the substrate 3 Next a P type clad layer 33, an active layer 34, an N type clad layer 35 and an ohmic contact layer 36 are successively grown. When the P type clad layer 33 is grown, a step different part 37 is especially larger melt-back than flat parts 38, 39 positively utilizing the dependence of migration and melt-back upon facial direction in case of liquid crystal growth so that the substrate 31 and the P type clad layer 33 may be partially connected with each other. A laser subject to high output operation with low threshold value current may be produced since the current may be concentrated in the bending span A, B to minimize leakage current.
公开日期	1985-04-16
申请日期	1983-09-22
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/80310]
专题	半导体激光器专利数据库
作者单位	TOSHIBA KK
推荐引用方式 GB/T 7714	WATANABE YUKIO. Manufacture of semiconductor laser. JP1985066486A. 1985-04-16.

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